SCHEMBL825172

SCHEMBL825172

CCC(C)(C)O[Si](C)(O)OC(C)(C)CC

nearest known ligand 0.41

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.41
TDP1 Q9NUW8 2/20 0.41
ALDH1A1 P00352 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL182496 0.80 TSHR (0.43) TSHRTDP1ALDH1A1
SCHEMBL1975221 0.80 TSHR (0.43) TSHRTDP1ALDH1A1
SCHEMBL19176684 0.77 ALDH1A1 (0.36) TSHRTDP1ALDH1A1
SCHEMBL7928079 0.77 TSHR (0.45) TSHRTDP1ALDH1A1
SCHEMBL26090676 0.76 ALDH1A1 (0.39) TSHRTDP1ALDH1A1
SCHEMBL15685015 0.74 ALDH1A1 (0.38) TSHRTDP1ALDH1A1
SCHEMBL4947212 0.74 ALDH1A1 (0.38) TSHRTDP1ALDH1A1
SCHEMBL4630501 0.74 ALDH1A1 (0.38) TSHRTDP1ALDH1A1
SCHEMBL4630474 0.74 ALDH1A1 (0.38) TSHRTDP1ALDH1A1
SCHEMBL9565171 0.73 TSHR (0.47) TSHRTDP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116802773-A Liquid phase conformal silicon oxide spin-on deposition 东京毅力科创株式会社 2023-09-22 CN claimed
WO-2022169934-A1 LIQUID PHASE CONFORMAL SILICON OXIDE SPIN-ON DEPOSITION TOKYO ELECTRON LIMITED (JP) 2022-08-11 WO claimed
US-20220254630-A1 LIQUID PHASE CONFORMAL SILICON OXIDE SPIN-ON DEPOSITION TOKYO ELECTRON LIMITED (JP) 2022-08-11 US claimed
WO-2022164730-A1 METHOD FOR SELECTIVE DEPOSITION OF DIELECTRIC ON DIELECTRIC TOKYO ELECTRON LIMITED (JP) 2022-08-04 WO claimed
US-20220238323-A1 METHOD FOR SELECTIVE DEPOSITION OF DIELECTRIC ON DIELECTRIC TOKYO ELECTRON LIMITED (JP) 2022-07-28 US claimed
US-7491653-B1 Metal-free catalysts for pulsed deposition layer process for conformal silica laminates NOVELLUS SYSTEMS, INC. (US) 2009-02-17 US claimed
US-7271112-B1 Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry NOVELLUS SYSTEMS, INC. (US) 2007-09-18 US claimed
US-7135418-B1 Optimal operation of conformal silica deposition reactors NOVELLUS SYSTEMS, INC. (US) 2006-11-14 US claimed
US-7109129-B1 Optimal operation of conformal silica deposition reactors NOVELLUS SYSTEMS, INC. (US) 2006-09-19 US claimed
US-20260125799-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS TOKYO ELECTRON LTD (JP) 2026-05-07 US disclosed
US-20260117371-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS TOKYO ELECTRON LTD (JP) 2026-04-30 US disclosed
US-20250293021-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS TOKYO ELECTRON LIMITED (JP) 2025-09-18 US disclosed
US-20250226210-A1 FILM FORMATION METHOD AND SUBSTRATE PROCESSING APPARATUS TOKYO ELECTRON LIMITED (JP) 2025-07-10 US disclosed
US-20250224676-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS TOKYO ELECTRON LIMITED (JP) 2025-07-10 US disclosed
US-7163899-B1 Localized energy pulse rapid thermal anneal dielectric film densification method NOVELLUS SYSTEMS, INC. (US) 2007-01-16 US disclosed
US-7148155-B1 Sequential deposition/anneal film densification method NOVELLUS SYSTEMS, INC. (US) 2006-12-12 US disclosed
US-7135418-B1 Optimal operation of conformal silica deposition reactors NOVELLUS SYSTEMS, INC. (US) 2006-11-14 US disclosed
US-7129189-B1 Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD) NOVELLUS SYSTEMS, INC. (US) 2006-10-31 US disclosed
US-7109129-B1 Optimal operation of conformal silica deposition reactors NOVELLUS SYSTEMS, INC. (US) 2006-09-19 US disclosed
US-6867152-B1 Properties of a silica thin film produced by a rapid vapor deposition (RVD) process NOVELLUS SYSTEMS, INC. (US) 2005-03-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260117371-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS SCO2, PPOX, LPO TSHR 1066/4885TDP1 3721/4885ALDH1A1 2365/4885
US-20260125799-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS CFD, CDH1, FTO TSHR 160/4885TDP1 924/4885ALDH1A1 3426/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.