Salicylic Acid

Salicylic Acid

SCHEMBL887149

CC[N+](CC)(CC)CC.O=C([O-])c1ccccc1O

nearest known ligand 0.68

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHE

The experimentally established mechanism targets of Salicylic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 8/20 0.68
ALDH1A1 P00352 4/20 0.68
HPGD P15428 4/20 0.68
GAA P10253 3/20 0.46
SMN1; SMN2 Q16637 4/20 0.45
CA1 P00915 2/20 0.45
CA9 Q16790 2/20 0.45
CA12 O43570 1/20 0.45
CA2 P00918 1/20 0.45
HMGB1 P09429 1/20 0.45
CA4 P22748 1/20 0.45
CA6 P23280 1/20 0.45
CA7 P43166 1/20 0.45
NAPRT Q6XQN6 1/20 0.45
CA14 Q9ULX7 1/20 0.45
TSHR P16473 3/20 0.44
LMNA P02545 3/20 0.44
MAPT P10636 2/20 0.44
HSD17B10 Q99714 2/20 0.44
HTT P42858 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phthalic Acid SCHEMBL2452632 0.88 ALDH1A1 (0.48) KDM4EALDH1A1HPGDCA2CA4
Phthalic Acid SCHEMBL8014901 0.86 ALDH1A1 (0.47) KDM4EALDH1A1HPGDCA2CA4
Tetrapropylammonium SCHEMBL104579 0.86 KDM4E (0.63) KDM4EALDH1A1HPGDGAASMN1; SMN2
2,3-Dihydroxybenzoic Acid SCHEMBL5677506 0.86 ALDH1A1 (0.48) KDM4EALDH1A1HPGDCA1CA9
Salicylic Acid SCHEMBL11342550 0.85 KDM4E (0.73) KDM4EALDH1A1HPGDGAASMN1; SMN2
Salicylic Acid SCHEMBL982277 0.85 KDM4E (0.73) KDM4EALDH1A1HPGDGAASMN1; SMN2
Salicylic Acid SCHEMBL18340669 0.85 KDM4E (0.80) KDM4EALDH1A1HPGDGAASMN1; SMN2
Salicylic Acid SCHEMBL31547399 0.85 ALDH1A1 (0.53) KDM4EALDH1A1HPGDGAASMN1; SMN2
Salicylic Acid SCHEMBL106469 0.84 KDM4E (0.79) KDM4EALDH1A1HPGDGAASMN1; SMN2
Salicylic Acid SCHEMBL6249450 0.84 KDM4E (0.95) KDM4EALDH1A1HPGDGAASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5356748-A Nonaqueous solvent containing dispersed resin grains and graft polymer stabilizer FUJI PHOTO FILM CO., LTD. (JP) 1994-10-18 US claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-5733661-A METAL OXIDE CONTAINING IONS OF AN ORGANIC CARBOXYLIC ACID SALT AND/OR IONS OF AN INORGANIC OXOACID SALT MITSUBISHI CHEMICAL CORPORATION (JP) 1998-03-31 US disclosed
US-5589312-A RESIN GRAINS FUJI PHOTO FILM CO., LTD. (JP) 1996-12-31 US disclosed
US-5532099-A RESIN GRAINS DISPERSED IN A NONAQUEOUS SOLVENT POLYMERIZED IN PRESENCE OF DISPERSION STABILIZING RESIN; TONER IMAGES HAVING RESIST WITH ETCHING RESISTANCE FUJI PHOTO FILM CO., LTD. (JP) 1996-07-02 US disclosed
US-5356748-A Nonaqueous solvent containing dispersed resin grains and graft polymer stabilizer FUJI PHOTO FILM CO., LTD. (JP) 1994-10-18 US disclosed
US-5308730-A Liquid developer for electrostatic photography FUJI PHOTO FILM CO., LTD. (JP) 1994-05-03 US disclosed
EP-0227433-B1 ELECTROLYTE SOLUTION OF QUATERNARY AMMONIUM SALT FOR ELECTROLYTIC CAPACITOR MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1992-01-15 EP disclosed
US-4885115-A Liquid electrolyte for use in electrolytic capacitor NIPPON CHEMI-CON CORPORATION (JP) 1989-12-05 US disclosed
US-4734821-A AMMONIUM SALT OF CARBOXYLIC ACID ASAHI GLASS COMPANY LTD. (JP) 1988-03-29 US disclosed
US-4715976-A QUATERNARY AMMONIUM SALT OF CARBOXYLIC ACID IN APROTIC SOLVENT MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1987-12-29 US disclosed
EP-0227433-A2 Electrolyte solution of quaternary ammonium salt for electrolytic capacitor MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1987-07-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 KDM4E 404/4885ALDH1A1 1586/4885HPGD 4756/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA KDM4E 757/4885ALDH1A1 4472/4885HPGD 4883/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX KDM4E 1336/4885ALDH1A1 4644/4885HPGD 4860/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 KDM4E 588/4885ALDH1A1 4452/4885HPGD 4878/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR KDM4E 2013/4885ALDH1A1 1558/4885HPGD 4586/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 KDM4E 2013/4885ALDH1A1 4150/4885HPGD 4870/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.