SCHEMBL954742

SCHEMBL954742

CC(C)(C)c1ccc(S(OS(=O)(=O)C(F)(F)C(O)C(F)(F)F)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.45

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 10/20 0.45
ALDH1A1 P00352 3/20 0.39
HSD17B3 P37058 1/20 0.39
NPC1 O15118 1/20 0.39
RECQL P46063 1/20 0.39
RAB9A P51151 1/20 0.39
RORA P35398 1/20 0.38
MAPT P10636 1/20 0.38
NR1H3 Q13133 1/20 0.37
UQCRB P14927 1/20 0.36
HSD17B2 P37059 1/20 0.36
MAOA P21397 1/20 0.36
NR1I2 O75469 1/20 0.36
EEF2K O00418 1/20 0.36
GAA P10253 1/20 0.36
TDP1 Q9NUW8 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16195277 0.95 HSD11B1 (0.41) HSD11B1ALDH1A1HSD17B3NPC1RECQL
SCHEMBL16195010 0.90 HSD11B1 (0.45) HSD11B1ALDH1A1HSD17B3NPC1RAB9A
SCHEMBL482039 0.89 HSD11B1 (0.36) HSD11B1ALDH1A1NR1H3NR1I2
SCHEMBL1002572 0.85 PKM (0.38) HSD11B1ALDH1A1MAPTNR1I2
SCHEMBL6116193 0.85 HSD11B1 (0.42) HSD11B1ALDH1A1NPC1RECQLRAB9A
SCHEMBL4261409 0.84 HSD11B1 (0.42) HSD11B1ALDH1A1HSD17B3NPC1RECQL
SCHEMBL387181 0.83 HSD11B1 (0.50) HSD11B1ALDH1A1HSD17B3NPC1RECQL
SCHEMBL3136709 0.83 HSD11B1 (0.50) HSD11B1ALDH1A1HSD17B3NPC1RECQL
SCHEMBL962244 0.81 HSD11B1 (0.40) HSD11B1ALDH1A1HSD17B3NPC1RECQL
SCHEMBL962176 0.80 MAPT (0.42) HSD11B1ALDH1A1HSD17B3NPC1RECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8586282-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-19 US disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 HSD11B1 4388/4885ALDH1A1 4502/4885HSD17B3 3933/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 HSD11B1 3526/4885ALDH1A1 3081/4885HSD17B3 3711/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST HSD11B1 2970/4885ALDH1A1 2781/4885HSD17B3 2898/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 HSD11B1 1954/4885ALDH1A1 1348/4885HSD17B3 2403/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.