Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.34 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.34 |
| ▸ | HMGCR | P04035 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9924517 | 0.88 | CYP4F2 (0.34) | CYP4F2CYP4A11HMGCR | |
| SCHEMBL11991310 | 0.82 | LMNA (0.33) | LMNAHSD17B10CYP4F2CYP4A11 | |
| SCHEMBL14827778 | 0.82 | LMNA (0.33) | LMNAHSD17B10CYP4F2CYP4A11 | |
| SCHEMBL10158588 | 0.82 | CYP4F2 (0.39) | LMNAHSD17B10CYP4F2CYP4A11HMGCR | |
| SCHEMBL6368436 | 0.81 | CYP4F2 (0.37) | LMNAHSD17B10CYP4F2CYP4A11HMGCR | |
| SCHEMBL10094796 | 0.79 | CYP4F2 (0.38) | LMNAHSD17B10CYP4F2CYP4A11 | |
| SCHEMBL130762 | 0.79 | CYP4F2 (0.38) | LMNAHSD17B10CYP4F2CYP4A11HMGCR | |
| SCHEMBL21284569 | 0.79 | CYP4F2 (0.38) | LMNAHSD17B10CYP4F2CYP4A11HMGCR | |
| SCHEMBL14681138 | 0.78 | — | — | |
| SCHEMBL18253359 | 0.78 | CYP4F2 (0.35) | LMNAHSD17B10CYP4F2CYP4A11HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9703193-B2 | Onium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9645491-B2 | Sulfonium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20160349612-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20160320698-A1 | ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-03 | — | — | US | disclosed |
| US-20160320699-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9458144-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-8916331-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-23 | — | — | US | disclosed |
| US-8835094-B2 | Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-8795946-B2 | Polymerizable ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20130189620-A1 | POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-25 | — | — | US | disclosed |
| US-20130084517-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-07 | — | — | US | disclosed |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160349612-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | FANCF, PPM1F, SOS2 | LMNA 3998/4885HSD17B10 2603/4885CYP4F2 2156/4885 |
| US-20160342086-A1 | POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, RAD1, POLR1A | LMNA 711/4885HSD17B10 1770/4885CYP4F2 4296/4885 |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RER1, AFF1, RFT1 | LMNA 984/4885HSD17B10 1449/4885CYP4F2 836/4885 |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, DOT1L, H1-0 | LMNA 1178/4885HSD17B10 1131/4885CYP4F2 1311/4885 |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | ARFIP2, ARF1, ARF4 | LMNA 3585/4885HSD17B10 2654/4885CYP4F2 4754/4885 |
| US-20160320698-A1 | ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SLC6A5, EIF2B5, EIF2B4 | LMNA 1487/4885HSD17B10 1365/4885CYP4F2 2316/4885 |
| US-20130189620-A1 | POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | EEF1A1, ELL, LAS1L | LMNA 867/4885HSD17B10 2379/4885CYP4F2 4457/4885 |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | LMNA 780/4885HSD17B10 3403/4885CYP4F2 3713/4885 |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-10 | LMNA 1886/4885HSD17B10 2559/4885CYP4F2 3158/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.