SCHEMBL9925262

SCHEMBL9925262

CC(C)C(=O)OC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.38

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.38
CYP19A1 P11511 1/20 0.38
PKM P14618 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
ALDH1A1 P00352 1/20 0.37
HSD11B1 P28845 3/20 0.36
DPP4 P27487 3/20 0.36
NPSR1 Q6W5P4 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14389481 1.00 CYP17A1 (0.38) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL18469143 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL12897861 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL23417222 0.87 DPP4 (0.40) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL12705073 0.87 CYP17A1 (0.36) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL11931639 0.85 DPP4 (0.33) CYP17A1CYP19A1DPP4
SCHEMBL106291 0.84 HSD11B1 (0.38) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL19400628 0.84 CYP17A1 (0.35) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL18455670 0.84 CYP17A1 (0.35) CYP17A1CYP19A1PKML3MBTL1ALDH1A1
SCHEMBL12256166 0.83 PKM (0.38) CYP17A1CYP19A1PKML3MBTL1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11640114-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-02 US disclosed
US-11640114-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-02 US disclosed
CN-113444559-B Battery foil rolling additive and preparation method and application thereof 奎克化学(中国)有限公司 2023-03-21 CN disclosed
US-11327399-B2 Photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2022-05-10 US disclosed
CN-113444559-A Battery foil rolling additive and preparation method and application thereof 奎克化学(中国)有限公司 2021-09-28 CN disclosed
US-10915022-B2 Photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-02-09 US disclosed
US-20200354595-A1 AQUEOUS INK COMPOSITION, INK SET, AND IMAGE-FORMING METHOD FUJIFILM CORPORATION (JP) 2020-11-12 US disclosed
US-20200326625-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION AND PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-10-15 US disclosed
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-22 US disclosed
US-10747111-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-08-18 US disclosed
US-8148044-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-03 US disclosed
US-20110244394-A1 METHOD FOR PRODUCING RESIN SOLUTION FOR PHOTORESIST, PHOTORESIST COMPOSITION, AND PATTERN-FORMING METHOD DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-10-06 US disclosed
US-20100310991-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-09 US disclosed
US-20100297553-A1 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-11-25 US disclosed
US-20100167178-A1 Oxime sulfonates and the use thereof as latent acids YAMATO HITOSHI 2010-07-01 US disclosed
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-03 US disclosed
US-20100081086-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100081086-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-7531287-B2 Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed
US-7531287-B2 Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200326625-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION AND PROCESS FOR PRODUCING PHOTORESIST PATTERN HAX1, BRIX1, RXRA CYP17A1 2867/4885CYP19A1 990/4885PKM 2538/4885
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern RER1, BRIX1, NR2E3 CYP17A1 1268/4885CYP19A1 557/4885PKM 3110/4885
US-20100167178-A1 Oxime sulfonates and the use thereof as latent acids HAO2, SULT2A1, ARSA CYP17A1 1042/4885CYP19A1 216/4885PKM 3185/4885
US-10747111-B2 Compound, resin, photoresist composition and process for producing photoresist pattern HAX1, BRIX1, RXRA CYP17A1 2867/4885CYP19A1 990/4885PKM 2538/4885
US-11640114-B2 Compound, resin, photoresist composition and process for producing photoresist pattern HAX1, BRIX1, RXRA CYP17A1 2867/4885CYP19A1 990/4885PKM 2538/4885
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AFF1, F12, AFF2 CYP17A1 2939/4885CYP19A1 1755/4885PKM 3229/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.