SCHEMBL9972948

SCHEMBL9972948

Cc1cc(CCNC(=O)c2ccccc2)cc(C)c1O

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 11/20 0.61
NPC1 O15118 10/20 0.61
ESRRG P62508 1/20 0.58
LMNA P02545 1/20 0.55
POLB P06746 1/20 0.55
HDAC2 Q92769 2/20 0.55
HDAC8 Q9BY41 2/20 0.55
HDAC6 Q9UBN7 2/20 0.55
HDAC3 O15379 1/20 0.55
HDAC4 P56524 1/20 0.55
HDAC1 Q13547 1/20 0.55
HDAC7 Q8WUI4 1/20 0.55
HDAC10 Q969S8 1/20 0.55
HDAC11 Q96DB2 1/20 0.55
HDAC9 Q9UKV0 1/20 0.55
HDAC5 Q9UQL6 1/20 0.55
MEN1 O00255 2/20 0.52
GAA P10253 2/20 0.52
KMT2A Q03164 2/20 0.52
SMN1; SMN2 Q16637 4/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6046352 0.85 ESRRG (0.64) RAB9ANPC1ESRRGLMNAPOLB
SCHEMBL5212924 0.84 ERCC1 (0.60) RAB9ALMNAHDAC2HDAC8HDAC6
SCHEMBL5724399 0.81 NPC1 (0.64) RAB9ANPC1ESRRGMEN1GAA
SCHEMBL751214 0.80 HDAC2 (0.80) RAB9ANPC1ESRRGHDAC2HDAC8
SCHEMBL5969191 0.80 RAB9A (0.88) RAB9ANPC1ESRRGLMNAPOLB
SCHEMBL9972953 0.79 FPR2 (0.59) RAB9ANPC1HDAC2HDAC1MEN1
SCHEMBL28699553 0.79 RAB9A (0.83) RAB9ANPC1ESRRGLMNAPOLB
Hydrochloric Acid SCHEMBL28193721 0.79 HDAC2 (0.77) RAB9ANPC1ESRRGHDAC2HDAC8
SCHEMBL12190843 0.78 RAB9A (0.56) RAB9ANPC1LMNAPOLBHDAC2
SCHEMBL5594655 0.78 RAB9A (0.71) RAB9ANPC1ESRRGHDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-19 US disclosed
US-20180081270-A1 RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-22 US disclosed
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 US disclosed
US-20180074404-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 US disclosed
US-9908831-B2 Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-06 US disclosed
US-9897913-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-20 US disclosed
US-9785048-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-10-10 US disclosed
US-9746769-B2 2017-08-29 US disclosed
US-20170183279-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM MITSUBISHI GAS CHEMICAL CO (JP) 2017-06-29 US disclosed
US-20120171615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-20120164575-A1 CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-28 US disclosed
US-20120164576-A1 CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-28 US disclosed
US-20120156615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-21 US disclosed
US-8110334-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-02-07 US disclosed
US-7871751-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-01-18 US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 US disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 RAB9A 790/4885NPC1 2326/4885ESRRG 3034/4885
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION PARG, RAD51, SRMS RAB9A 1748/4885NPC1 3989/4885ESRRG 5/4885
US-20170183279-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM ADH1C, FABP6, ADH1A RAB9A 3566/4885NPC1 3819/4885ESRRG 268/4885
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN SLC11A2, ABCC1, FBL RAB9A 1751/4885NPC1 3321/4885ESRRG 153/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 RAB9A 2924/4885NPC1 3815/4885ESRRG 33/4885
US-20120156615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, CCNE1, CCNA1 RAB9A 1141/4885NPC1 1639/4885ESRRG 402/4885
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN CROCC, REV1, PARG RAB9A 1955/4885NPC1 3641/4885ESRRG 1361/4885
US-20120171615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, CCNE1, CCNA1 RAB9A 1141/4885NPC1 1639/4885ESRRG 402/4885
US-20120164576-A1 CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, RER1, REV1 RAB9A 929/4885NPC1 1486/4885ESRRG 656/4885
US-20120164575-A1 CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN WEE1, SLC11A2, RAD1 RAB9A 2141/4885NPC1 1078/4885ESRRG 1786/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.