SCHEMBL10279764

SCHEMBL10279764

CNC(c1ccc(Oc2ccc(C(NC)C(F)(F)F)cc2)cc1)C(F)(F)F

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CTSL P07711 2/20 0.41
CTSS P25774 2/20 0.41
CTSK P43235 2/20 0.41
PTPN1 P18031 1/20 0.35
LMNA P02545 5/20 0.34
HTT P42858 3/20 0.34
SMN1; SMN2 Q16637 3/20 0.34
TSHR P16473 2/20 0.34
HPGD P15428 2/20 0.34
CTSB P07858 1/20 0.33
MEN1 O00255 4/20 0.33
KMT2A Q03164 4/20 0.33
NPC1 O15118 2/20 0.33
CYP2D6 P10635 2/20 0.33
CYP2C19 P33261 2/20 0.33
MTOR P42345 2/20 0.33
RAB9A P51151 2/20 0.33
CYP3A4 P08684 2/20 0.33
SLC6A2 P23975 2/20 0.33
HTR2C P28335 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12197655 0.91 PTPN1 (0.38) CTSLCTSSCTSKPTPN1ALDH1A1
SCHEMBL13911344 0.87 CTSL (0.38) CTSLCTSSCTSKLMNAHTT
SCHEMBL10279734 0.86 ALDH1A1 (0.46) CTSLCTSSCTSKLMNAHTT
SCHEMBL13367152 0.83 CTSL (0.36) CTSLCTSSCTSKHTTSMN1; SMN2
SCHEMBL21752969 0.80 MEN1 (0.40) LMNAHTTSMN1; SMN2MEN1KMT2A
SCHEMBL25698227 0.79 CTSL (0.41) CTSLCTSSCTSKLMNAHTT
SCHEMBL10282965 0.79 SLC6A4 (0.37) CTSLCTSSCTSKLMNAHTT
SCHEMBL1421212 0.79 OPRK1 (0.45) CTSLCTSSCTSKLMNATSHR
SCHEMBL12797626 0.79 OPRK1 (0.45) CTSLCTSSCTSKLMNATSHR
SCHEMBL22016509 0.78 KIF11 (0.44) LMNAHTTSMN1; SMN2TSHRHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120214100-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-23 US disclosed
US-8030515-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-7928262-B2 Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-19 US disclosed
US-7919226-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-05 US disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-7514202-B2 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20080318160-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process RITTAL GMBH & CO. KG (DE) 2008-12-25 US disclosed
US-20080153030-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-26 US disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 CTSL 4547/4885CTSS 3100/4885CTSK 3403/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST CTSL 4829/4885CTSS 3997/4885CTSK 3875/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 CTSL 4140/4885CTSS 1423/4885CTSK 2701/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST CTSL 4829/4885CTSS 3997/4885CTSK 3875/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.