Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOA | P21397 | 1/20 | 0.47 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | CASP1 | P29466 | 2/20 | 0.44 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.43 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.40 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.40 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | RXRA | P19793 | 1/20 | 0.40 |
| ▸ | ACHE | P22303 | 1/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | CA7 | P43166 | 1/20 | 0.39 |
| ▸ | CA9 | Q16790 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18287910 | 0.93 | MAOA (0.50) | MAOALMNACASP1TSHRGAA | |
| SCHEMBL18535734 | 0.81 | MAOA (0.36) | MAOALMNACASP1TSHRGAA | |
| SCHEMBL11820573 | 0.81 | ALDH1A1 (0.37) | MAOALMNACASP1TSHRGAA | |
| SCHEMBL18844367 | 0.80 | ADRA1B (0.37) | MAOALMNACASP1TSHRGAA | |
| Benzene SCHEMBL11821265 | 0.76 | KDM4E (0.37) | LMNACASP1TSHRGAAKMT2A | |
| SCHEMBL16543025 | 0.76 | CA1 (0.44) | MAOASLC6A2SLC6A4SLC6A3RXRA | |
| SCHEMBL11816820 | 0.74 | KCNH2 (0.40) | LMNAL3MBTL1ALDH1A1PDE4APDE4B | |
| SCHEMBL16931627 | 0.72 | MAPT (0.46) | CASP1TSHRALDH1A1PDE4A | |
| SCHEMBL7212713 | 0.72 | ACHE (0.45) | LMNAMEN1KMT2AL3MBTL1ALDH1A1 | |
| SCHEMBL18287951 | 0.72 | CA1 (0.44) | MAOASLC6A2SLC6A4SLC6A3RXRA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| EP-3141958-A2 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR Corporation (JP) | 2017-03-15 | — | — | EP | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| EP-3133445-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | MAOA 1735/4885LMNA 293/4885CASP1 4418/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | MAOA 3208/4885LMNA 1379/4885CASP1 2866/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | MAOA 1117/4885LMNA 1024/4885CASP1 2530/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.