SCHEMBL1969360

SCHEMBL1969360

CCO[Si](OCC)(OCCOC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.37
TSHR P16473 2/20 0.34
KCNH3 Q9ULD8 2/20 0.33
ALDH1A1 P00352 2/20 0.31
POLB P06746 1/20 0.31
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
NPSR1 Q6W5P4 1/20 0.31
LMNA P02545 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
HPGD P15428 1/20 0.30
MAPK1 P28482 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
KCNH2 Q12809 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL393946 0.92 CA2 (0.41) CA2TSHRKCNH3ALDH1A1POLB
SCHEMBL29900 0.86 LTA4H (0.37) TSHRALDH1A1MEN1KMT2ANPSR1
SCHEMBL1033739 0.86 CA2 (0.31) CA2
SCHEMBL1967786 0.85 NCF1 (0.38) TSHRALDH1A1MEN1KMT2ANPSR1
SCHEMBL27975354 0.85 LMNA (0.36) ALDH1A1MEN1KMT2ALMNAHPGD
SCHEMBL7863713 0.85 LMNA (0.36) ALDH1A1MEN1KMT2ALMNAHPGD
SCHEMBL8415484 0.84 LTA4H (0.35) TSHRALDH1A1MEN1KMT2ANPSR1
SCHEMBL10495731 0.84 LTA4H (0.35) CA2TSHRALDH1A1MEN1KMT2A
Ammonia Solution, Strong SCHEMBL28965973 0.84 LTA4H (0.35) TSHRALDH1A1MEN1KMT2ANPSR1
Methane SCHEMBL27804293 0.84 LTA4H (0.35) TSHRALDH1A1MEN1KMT2ANPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 185 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
CN-102498440-A Silicon-containing composition having sulfonamide group for forming resist underlayer film NISSAN CHEMICAL IND LTD 2012-06-13 CN disclosed
EP-2376408-A2 FLUORINATION OF ORGANIC COMPOUNDS President and Fellows of Harvard College (US) 2011-10-19 EP disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
WO-2010059943-A2 FLUORINATION OF ORGANIC COMPOUNDS PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2010-05-27 WO disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
CN-101133364-A Composition for resist underlayer film and method for producing same JSR CORP (JP) 2008-02-27 CN disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 CA2 3173/4885TSHR 4084/4885KCNH3 399/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 CA2 1721/4885TSHR 1944/4885KCNH3 537/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L CA2 100/4885TSHR 3614/4885KCNH3 752/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 CA2 253/4885TSHR 4599/4885KCNH3 2187/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.