SCHEMBL2520945

SCHEMBL2520945

COCCOc1ccc(S2(OS(=O)(=O)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
HTT P42858 3/20 0.36
KMT2A Q03164 5/20 0.34
MEN1 O00255 3/20 0.34
ALDH1A1 P00352 3/20 0.33
HSD17B10 Q99714 1/20 0.33
FABP4 P15090 6/20 0.32
FABP5 Q01469 6/20 0.32
FABP3 P05413 1/20 0.32
KDM4E B2RXH2 4/20 0.32
HPGD P15428 1/20 0.32
TSHR P16473 2/20 0.32
MCOLN3 Q8TDD5 1/20 0.32
LMNA P02545 1/20 0.32
SLC2A1 P11166 2/20 0.31
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703653 0.90 KMT2A (0.44) HTTKMT2AMEN1ALDH1A1FABP4
SCHEMBL2521576 0.90 HTT (0.32) HTTKMT2AMEN1ALDH1A1KDM4E
SCHEMBL36281 0.89 SLC2A1 (0.41) HTTKMT2AMEN1FABP4FABP5
SCHEMBL3975128 0.89 MEN1 (0.32) HTTKMT2AMEN1ALDH1A1HSD17B10
SCHEMBL3965828 0.88 MEN1 (0.31) HTTKMT2AMEN1ALDH1A1HSD17B10
SCHEMBL36663 0.88 TSHR (0.43) HTTKMT2AMEN1ALDH1A1HSD17B10
SCHEMBL15206138 0.86 KMT2A (0.37) HTTKMT2AMEN1ALDH1A1HPGD
SCHEMBL36503 0.86 ALDH1A1 (0.39) ALDH1A1FABP4SLC2A1
SCHEMBL3973457 0.84 FABP4 (0.39) HTTFABP4HPGDLMNASMN1; SMN2
SCHEMBL2517298 0.84 TSHR (0.35) HTTKMT2AMEN1ALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-20130004900-A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM JSR CORPORATION (JP) 2013-01-03 US disclosed
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-8288073-B2 Pattern forming method JSR CORPORATION (JP) 2012-10-16 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
US-7749681-B2 Composition for forming lower layer film and pattern forming method JSR CORPORATION (JP) 2010-07-06 US disclosed
US-20100081082-A1 COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION JSR CORPORATION (JP) 2010-04-01 US disclosed
US-20090098486-A1 COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2009-04-16 US disclosed
EP-1995636-A1 COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD JSR Corporation (JP) 2008-11-26 EP disclosed
EP-1386904-B1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORP (JP) 2008-09-17 EP disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
US-7037994-B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2006-05-02 US disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA HTT 4125/4885KMT2A 1845/4885MEN1 3910/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.