SCHEMBL36663

SCHEMBL36663

CCOc1ccc(S2(OS(=O)(=O)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.43
ALDH1A1 P00352 6/20 0.43
LMNA P02545 6/20 0.43
HTT P42858 4/20 0.43
MCOLN3 Q8TDD5 1/20 0.43
HPGD P15428 5/20 0.39
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
NPSR1 Q6W5P4 3/20 0.39
RECQL P46063 1/20 0.39
FABP4 P15090 1/20 0.38
SMN1; SMN2 Q16637 4/20 0.37
MAPT P10636 3/20 0.37
ALOX12 P18054 2/20 0.37
POLB P06746 1/20 0.37
ALOX15 P16050 1/20 0.37
GAA P10253 2/20 0.36
KDM4E B2RXH2 1/20 0.36
HSD17B10 Q99714 2/20 0.36
PKM P14618 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2517298 0.91 TSHR (0.35) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL703653 0.91 KMT2A (0.44) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL36281 0.90 SLC2A1 (0.41) TSHRHTTMCOLN3MEN1KMT2A
SCHEMBL2521576 0.89 HTT (0.32) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL3119750 0.88 TSHR (0.42) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL2520945 0.88 HTT (0.36) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL3973457 0.87 FABP4 (0.39) LMNAHTTHPGDNPSR1FABP4
SCHEMBL704518 0.87 TSHR (0.41) TSHRALDH1A1LMNAHTTMCOLN3
SCHEMBL36503 0.87 ALDH1A1 (0.39) ALDH1A1FABP4SLC2A1
SCHEMBL2958135 0.85 TYMS (0.38) TSHRALDH1A1LMNAHTTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 324 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
EP-2093213-B1 Positive resist composition and method of forming a resist pattern using the same TOKYO OHKA KOGYO CO LTD (JP) 2017-10-04 EP disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
EP-2073060-B1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2016-08-24 EP disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-6800419-B2 FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed
EP-1270553-A2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR Corporation (JP) 2003-01-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA TSHR 1160/4885ALDH1A1 1216/4885LMNA 3265/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.