SCHEMBL297993

SCHEMBL297993

O=[PH](O)OC(Cc1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.43
ACP3 P15309 1/20 0.43
CYP1A2 P05177 1/20 0.41
SRR Q9GZT4 2/20 0.40
ALPI P09923 1/20 0.39
PKM P14618 1/20 0.39
PTGS1 P23219 1/20 0.39
XIAP P98170 1/20 0.39
SLC7A5 Q01650 1/20 0.39
PPARG P37231 4/20 0.38
PPARA Q07869 3/20 0.38
KEAP1 Q14145 1/20 0.38
ALDH1A1 P00352 1/20 0.38
HTT P42858 1/20 0.38
NCOA1 Q15788 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
NCOA3 Q9Y6Q9 1/20 0.38
MTNR1A P48039 1/20 0.38
MTNR1B P49286 1/20 0.38
MDM2 Q00987 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27560452 0.89 PPARG (0.43) PKMPPARGPPARASMN1; SMN2
SCHEMBL27560455 0.89 MEN1 (0.42) PKMPPARGPPARASMN1; SMN2
SCHEMBL11578746 0.85 EPHX1 (0.42) EPHX1ACP3CYP1A2SRRALPI
SCHEMBL28980079 0.80 LMNA (0.44) ALDH1A1
SCHEMBL9052442 0.79 CYP1A2 (0.45) EPHX1CYP1A2SRRALPIPKM
SCHEMBL8885808 0.79 POLB (0.38) ACP3CYP1A2PKMSMN1; SMN2
Hydrochloric Acid SCHEMBL7378130 0.78 SRR (0.44) EPHX1CYP1A2SRRALPIPKM
SCHEMBL15451165 0.76 CYP1A2 (0.42) CYP1A2SRRALPIPKMPTGS1
SCHEMBL8610252 0.76 EPHX1 (0.52) EPHX1CYP1A2SRRALPIPKM
SCHEMBL29200771 0.76 RIPK1 (0.39) EPHX1SLC6A2SLC6A4SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 397 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240077802-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-03-07 US claimed
US-20230384673-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-30 US claimed
US-20260140444-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-21 US disclosed
US-20260130180-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-07 US disclosed
US-12607937-B2 Photoresist top coating material for etching rate control TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-04-21 US disclosed
US-20260104643-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-16 US disclosed
US-20260079395-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO LTD (JP) 2026-03-19 US disclosed
US-12578640-B2 Photosensitive material for photoresist and lithography TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-03-17 US disclosed
US-12566374-B2 Photoresist composition and method of manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-03-03 US disclosed
US-12566376-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2026-03-03 US disclosed
US-20260050211-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF TOKYO OHKA KOGYO CO LTD (JP) 2026-02-19 US disclosed
US-20040121316-A1 Method and compositions for identifying anti-HIV therapeutic compounds GILEAD SCIENCES, INC. 2004-06-24 US disclosed
US-20040023163-A1 Positive-working chemical-amplification photoresist composition YUKAWA HIROTO (JP) 2004-02-05 US disclosed
WO-2003090691-A2 METHOD AND COMPOSITIONS FOR IDENTIFYING ANTI-HIV THERAPEUTIC COMPOUNDS GILEAD SCIENCES, INC. (US) 2003-11-06 WO disclosed
WO-2003091264-A2 NON NUCLEOSIDE REVERSE TRANSCRIPTASE INHIBITORS GILEAD SCIENCES, INC. (US) 2003-11-06 WO disclosed
EP-0985975-B1 Positive-working chemical-amplification photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2003-03-19 EP disclosed
US-20020119393-A1 Positive-working chemical-amplification photoresist composition YUKAWA HIROTO (JP) 2002-08-29 US disclosed
EP-0985975-A1 Positive-working chemical-amplification photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-15 EP disclosed
EP-0815103-A1 TRYPSIN AND THROMBIN INHIBITORS Novartis AG (CH) 1998-01-07 EP disclosed
WO-1996029327-A1 TRYPSIN AND THROMBIN INHIBITORS NOVARTIS AG (CH) 1996-09-26 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260140444-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INO80C, INO80, NAT10 EPHX1 4283/4885ACP3 3091/4885CYP1A2 3269/4885
US-20040121316-A1 Method and compositions for identifying anti-HIV therapeutic compounds CES1, PNP, PGLS EPHX1 297/4885ACP3 192/4885CYP1A2 2040/4885
US-12607937-B2 Photoresist top coating material for etching rate control ERCC1, ERCC2, RAD23B EPHX1 1709/4885ACP3 2106/4885CYP1A2 3800/4885
US-20260079395-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT F9, AFF2, AFF1 EPHX1 3391/4885ACP3 4831/4885CYP1A2 1364/4885
US-12566374-B2 Photoresist composition and method of manufacturing semiconductor device INO80C, INO80, PI4K2B EPHX1 4119/4885ACP3 3153/4885CYP1A2 3418/4885
US-20260050211-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF RARG, RXRG, IGF1R EPHX1 4015/4885ACP3 3204/4885CYP1A2 523/4885
US-12578640-B2 Photosensitive material for photoresist and lithography CDH1, ALG3, TRPA1 EPHX1 2955/4885ACP3 2457/4885CYP1A2 1454/4885
US-12566376-B2 Resist composition and resist pattern forming method RER1, REV1, GAR1 EPHX1 1581/4885ACP3 3328/4885CYP1A2 381/4885
US-20260130180-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION C9, C1S, ZKSCAN2 EPHX1 1231/4885ACP3 2565/4885CYP1A2 2686/4885
US-20260104643-A1 METHOD OF FORMING PHOTORESIST PATTERN DSTN, PFAS, DNTT EPHX1 1694/4885ACP3 4488/4885CYP1A2 1011/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.