SCHEMBL3481941

SCHEMBL3481941

CCCO[SiH2]c1ccc(C)cc1

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.35
TDP1 Q9NUW8 1/20 0.35
AGXT P21549 2/20 0.31
DRD2 P14416 1/20 0.31
DRD4 P21917 1/20 0.31
DRD3 P35462 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
IDO1 P14902 1/20 0.30
CA2 P00918 1/20 0.30
LPL P06858 1/20 0.30
LIPG Q9Y5X9 1/20 0.30
ORAI1 Q96D31 1/20 0.30
ORAI2 Q96SN7 1/20 0.30
ORAI3 Q9BRQ5 1/20 0.30
TRPV6 Q9H1D0 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481787 0.82 ACHE (0.38) ACHETDP1AGXTIDO1CA2
SCHEMBL3482609 0.81 LPL (0.39) TDP1IDO1CA2LPLLIPG
SCHEMBL703559 0.80 LMNA (0.39) MEN1KMT2A
SCHEMBL3482272 0.78
SCHEMBL21409798 0.76 CHRNB2 (0.44) MEN1KMT2A
SCHEMBL4858072 0.71 ACHE (0.47) ACHETDP1AGXTMEN1KMT2A
SCHEMBL3482364 0.70 RAPGEF4 (0.31)
SCHEMBL2873305 0.69 ACHE (0.44) ACHETDP1AGXTMEN1KMT2A
SCHEMBL11278838 0.68 HTR1B (0.35)
SCHEMBL706853 0.68 LTA4H (0.47) TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed