SCHEMBL36458

SCHEMBL36458

CS(C)(OS(=O)(=O)C(F)(F)F)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR6 P50406 2/20 0.39
PSIP1 O75475 1/20 0.39
HSD11B1 P28845 1/20 0.39
APOBEC3G Q9HC16 1/20 0.38
CA2 P00918 3/20 0.37
ALDH1A1 P00352 2/20 0.37
CA1 P00915 2/20 0.37
CA5A P35218 2/20 0.37
CA9 Q16790 2/20 0.37
HSD17B10 Q99714 2/20 0.37
TDP1 Q9NUW8 1/20 0.37
CA12 O43570 1/20 0.37
CA3 P07451 1/20 0.37
CA4 P22748 1/20 0.37
CA6 P23280 1/20 0.37
CA7 P43166 1/20 0.37
PLA2G7 Q13093 1/20 0.37
CA13 Q8N1Q1 1/20 0.37
CA14 Q9ULX7 1/20 0.37
CA5B Q9Y2D0 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL562051 0.85 GAA (0.43) CA2ALDH1A1CA1CA5ACA9
SCHEMBL36166 0.84 HTR6 (0.39) HTR6PSIP1HSD11B1APOBEC3GCA2
SCHEMBL1594210 0.84 CA1 (0.38) HTR6PSIP1HSD11B1CA2CA1
SCHEMBL271197 0.83 CA1 (0.41) HSD11B1CA2CA1HSD17B10MEN1
SCHEMBL5857846 0.82 PKM (0.50) HSD11B1CA2ALDH1A1CA1SMN1; SMN2
SCHEMBL37033 0.79 HTR6 (0.42) HTR6PSIP1HSD11B1APOBEC3GCA2
SCHEMBL8847449 0.79 HTR6 (0.42) HTR6PSIP1HSD11B1APOBEC3GCA2
SCHEMBL444803 0.78 PTGS2 (0.44) HSD11B1
SCHEMBL5857331 0.78 CA12 (0.51) CA2ALDH1A1CA1CA9TDP1
SCHEMBL5410134 0.77 PSIP1 (0.45) HTR6PSIP1HSD11B1APOBEC3GCA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1315 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP claimed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
EP-4714990-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
EP-4714988-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
EP-0875787-A1 Method for reducing the substrate dependence of resist Wako Pure Chemical Industries, Ltd. (JP) 1998-11-04 EP disclosed
EP-0789279-A1 Polymer and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-08-13 EP disclosed
EP-0780732-A2 Polymer composition and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-06-25 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 HTR6 3670/4885PSIP1 3809/4885HSD11B1 1171/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM HTR6 1058/4885PSIP1 2593/4885HSD11B1 558/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 HTR6 4317/4885PSIP1 3502/4885HSD11B1 20/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 HTR6 2785/4885PSIP1 1070/4885HSD11B1 3567/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.