SCHEMBL4452958

SCHEMBL4452958

CCS(=O)(=O)O[I+](c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PSIP1 O75475 1/20 0.40
LMNA P02545 1/20 0.36
HTT P42858 1/20 0.36
KMT2A Q03164 2/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
L3MBTL1 Q9Y468 2/20 0.32
HSD11B1 P28845 1/20 0.32
TSHR P16473 2/20 0.32
F2 P00734 1/20 0.32
PRSS1 P07477 1/20 0.32
PRSS2 P07478 1/20 0.32
PRSS3 P35030 1/20 0.32
ESR1 P03372 1/20 0.32
MAPK1 P28482 1/20 0.32
HSD17B10 Q99714 1/20 0.32
NR3C2 P08235 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7582840 0.88 HTT (0.43) HTTL3MBTL1HSD11B1ALDH1A1
SCHEMBL7573544 0.86 PSIP1 (0.36) PSIP1LMNAHTTKMT2ASMN1; SMN2
SCHEMBL5707386 0.84 LMNA (0.34) PSIP1LMNAHTTNPSR1ALDH1A1
SCHEMBL1628636 0.78 KEAP1 (0.37) PSIP1SMN1; SMN2TSHRF2PRSS1
SCHEMBL4483668 0.77 CA1 (0.41) KMT2ASMN1; SMN2HSD11B1TSHRMAPK1
SCHEMBL7576454 0.77 HTT (0.40) LMNAHTTSMN1; SMN2L3MBTL1HSD11B1
SCHEMBL4654652 0.73 PTGS2 (0.39) HTTALDH1A1
SCHEMBL454458 0.72 HTR6 (0.42) PSIP1LMNAHTTKMT2ASMN1; SMN2
SCHEMBL36178 0.71 CA2 (0.36) TSHRPRSS1PRSS2PRSS3CA1
SCHEMBL52310 0.69 VDR (0.46) LMNAHTTKMT2ASMN1; SMN2L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed
US-20020196896-A1 Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-12-26 US disclosed
EP-1193553-A2 Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-04-03 EP disclosed