SCHEMBL482038

SCHEMBL482038

O=S(=O)([O-])C(F)(F)C(O)C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.33

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.33
GPR3 P46089 1/20 0.33
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31
CA9 Q16790 2/20 0.31
CA12 O43570 1/20 0.31
CA14 Q9ULX7 1/20 0.31
HSD11B1 P28845 2/20 0.31
NR1I2 O75469 1/20 0.30
CA5A P35218 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1002571 0.93 PKM (0.32) PTPN1HSD11B1
SCHEMBL546756 0.89 HSD11B1 (0.36) HSD11B1
SCHEMBL6116190 0.88 KDM4E (0.37) HSD11B1
SCHEMBL7708207 0.82 GPR3 (0.34) PTPN1GPR3CA1CA2CA9
SCHEMBL5872604 0.81 GPR3 (0.36) PTPN1GPR3CA1CA2CA9
Trifluoromethanesulfonic Acid SCHEMBL37032 0.79 GPR3 (0.50) PTPN1GPR3CA1CA2CA9
Trifluoromethanesulfonic Acid SCHEMBL31155703 0.79 GPR3 (0.50) PTPN1GPR3CA1CA2CA9
Trifluoromethanesulfonic Acid SCHEMBL6118365 0.77 GPR3 (0.48) PTPN1GPR3CA1CA2CA9
SCHEMBL29745863 0.77 GPR3 (0.40) PTPN1GPR3CA1CA2CA9
SCHEMBL2437867 0.77 GPR3 (0.40) PTPN1GPR3CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12429772-B2 Chemically amplified resist composition, photomask blank, method for forming resist pattern, and method for producing polymer compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-30 US disclosed
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 US disclosed
EP-4089481-A2 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND Shin-Etsu Chemical Co., Ltd. (JP) 2022-11-16 EP disclosed
US-11163232-B2 Resist composition, patterning process, and barium salt SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-02 US disclosed
US-20190113846-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-04-18 US disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-9223205-B2 Acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-29 US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 US disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 PTPN1 1272/4885GPR3 4262/4885CA1 4371/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 PTPN1 1482/4885GPR3 1063/4885CA1 409/4885
US-11163232-B2 Resist composition, patterning process, and barium salt LBR, SMARCC2, SMARCC1 PTPN1 1975/4885GPR3 3494/4885CA1 688/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST PTPN1 1964/4885GPR3 1780/4885CA1 557/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 PTPN1 3359/4885GPR3 486/4885CA1 1417/4885
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS PAG1, PARG, PAH PTPN1 1368/4885GPR3 3034/4885CA1 3028/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.