Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACHE known ✓ | P22303 | 2/20 | 0.35 |
| ▸ | HTR1A | P08908 | 1/20 | 0.39 |
| ▸ | MAOA | P21397 | 1/20 | 0.39 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.39 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.39 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.39 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.39 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 3/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.36 |
| ▸ | HPGD | P15428 | 3/20 | 0.36 |
| ▸ | RAB9A | P51151 | 2/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | NPC1 | O15118 | 1/20 | 0.36 |
| ▸ | RAD52 | P43351 | 2/20 | 0.35 |
| ▸ | BCHE | P06276 | 2/20 | 0.35 |
| ▸ | PSMD14 | O00487 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29402572 | 0.89 | GAA (0.40) | LMNAPKM | |
| SCHEMBL30441277 | 0.86 | ALDH1A1 (0.41) | MAOALMNAALDH1A1KDM4ERAB9A | |
| SCHEMBL4635239 | 0.85 | HTR1A (0.38) | HTR1AMAOASLC6A2SLC6A4ADRA1A | |
| SCHEMBL30397003 | 0.85 | ALDH1A1 (0.39) | ALDH1A1ACHEKMT2ACA2CA9 | |
| SCHEMBL207123 | 0.84 | KEAP1 (0.39) | ALDH1A1SMN1; SMN2CA12CA2CA9 | |
| Sulfuric Acid SCHEMBL5798230 | 0.84 | HTR6 (0.39) | ALDH1A1SMN1; SMN2KMT2APOLBCA12 | |
| SCHEMBL4485964 | 0.80 | PSIP1 (0.43) | LMNANPSR1CA12CA2CA9 | |
| Sulfuric Acid SCHEMBL5798237 | 0.79 | TSHR (0.44) | ALDH1A1KDM4EHPGDSMN1; SMN2KMT2A | |
| SCHEMBL7102917 | 0.79 | FAAH (0.39) | ALDH1A1SMN1; SMN2CA12CA2CA9 | |
| SCHEMBL561475 | 0.79 | FAAH (0.39) | ALDH1A1SMN1; SMN2CA12CA2CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12275693-B2 | Onium salt, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-04-15 | — | — | US | disclosed |
| CN-119330920-A | Photoacid generator, resist composition and application thereof | 湖北鼎龙控股股份有限公司 | 2025-01-21 | — | — | CN | disclosed |
| WO-2024070091-A1 | ONIUM SALT, PHOTOACID GENERATOR, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING DEVICE USING SAID RESIST COMPOSITION | 東洋合成工業株式会社 | 2024-04-04 | — | — | WO | disclosed |
| CN-110554569-B | Resist composition and patterning method | 信越化学工业株式会社 | 2024-01-16 | — | — | CN | disclosed |
| CN-112824382-B | Onium salt compound, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2023-09-29 | — | — | CN | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| CN-112979458-B | Onium salt compound, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2023-08-25 | — | — | CN | disclosed |
| CN-116425626-A | Salt compound, resist composition and pattern forming method | 信越化学工业株式会社 | 2023-07-14 | — | — | CN | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| CN-113045465-B | Onium salt compound, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2023-06-23 | — | — | CN | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-9348227-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-24 | — | — | US | disclosed |
| US-20150355544-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-22 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-7335787-B2 | Method for producing onium salt derivatives, and novel onium salt derivatives | TOYO GOSEI KOGYO CO., LTD. (JP) | 2008-02-26 | — | — | US | disclosed |
| US-20050176982-A1 | Method for producing onium salt derivatives, and novel onium salt derivatives | TOYO GOSEI KOGYO CO., LTD. (JP) | 2005-08-11 | — | — | US | disclosed |
| US-6620957-B1 | Process for producing onium salt derivative and novel onium salt derivative | TOYO GOSEI KOGYO CO., LTD. (JP) | 2003-09-16 | — | — | US | disclosed |
| EP-1164127-A1 | PROCESS FOR PRODUCING ONIUM SALT DERIVATIVE AND NOVEL ONIUM SALT DERIVATIVE | Toyo Gosei Kogyo Co., Ltd. (JP) | 2001-12-19 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | ACHE 4852/4885HTR1A 4794/4885MAOA 4688/4885 |
| US-12275693-B2 | Onium salt, chemically amplified resist composition and patterning process | PAG1, SLC6A5, LBR | ACHE 4162/4885HTR1A 3508/4885MAOA 3464/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | ACHE 4522/4885HTR1A 4571/4885MAOA 4141/4885 |
| US-20050176982-A1 | Method for producing onium salt derivatives, and novel onium salt derivatives | STS, NANS, GRIK5 | ACHE 3795/4885HTR1A 4799/4885MAOA 4314/4885 |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | PAG1, PARG, PAH | ACHE 4819/4885HTR1A 2619/4885MAOA 1122/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.