Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 5/20 | 0.56 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.56 |
| ▸ | LMNA | P02545 | 3/20 | 0.56 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.56 |
| ▸ | HDAC4 | P56524 | 2/20 | 0.56 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.56 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.56 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.56 |
| ▸ | HDAC6 | Q9UBN7 | 2/20 | 0.56 |
| ▸ | PLIN1 | O60240 | 2/20 | 0.56 |
| ▸ | RECQL | P46063 | 2/20 | 0.56 |
| ▸ | PLIN5 | Q00G26 | 2/20 | 0.56 |
| ▸ | ABHD5 | Q8WTS1 | 2/20 | 0.56 |
| ▸ | F3 | P13726 | 2/20 | 0.56 |
| ▸ | TNKS | O95271 | 1/20 | 0.56 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.56 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.56 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.56 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.56 |
| ▸ | TNKS2 | Q9H2K2 | 1/20 | 0.56 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15048592 | 0.88 | MAOB (0.56) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL15048548 | 0.88 | FOS (0.58) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL5245151 | 0.82 | MAOB (0.58) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL27486273 | 0.82 | MAOB (0.58) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL5323206 | 0.82 | MMP1 (0.55) | MAOBMAOAMMP1MMP2MMP9 | |
| SCHEMBL8675252 | 0.80 | MAOB (0.53) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL29466710 | 0.80 | MAPT (0.56) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL29670874 | 0.80 | MAPT (0.56) | MAPTALDH1A1LMNAHDAC3HDAC4 | |
| SCHEMBL30688107 | 0.78 | — | — | |
| SCHEMBL23457945 | 0.78 | ALDH1A1 (0.61) | MAPTALDH1A1LMNAHDAC3HDAC4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 220 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119220083-A | Polyurethane shoe material and preparation method thereof | 广东康诚新材料科技股份有限公司 | 2024-12-31 | — | — | CN | claimed |
| CN-118818901-A | KrF negative photoresist and preparation method and patterning forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-10-22 | — | — | CN | claimed |
| CN-114253072-B | KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2024-10-15 | — | — | CN | claimed |
| CN-114236965-B | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2024-07-26 | — | — | CN | claimed |
| US-20230161240-A1 | MANUFACTURING METHOD OF EUV PHOTO MASKS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-25 | — | — | US | claimed |
| CN-115650886-A | Oxime sulfonate photoacid generators and use of resist compositions | 瑞红(苏州)电子化学品股份有限公司 | 2023-01-31 | — | — | CN | claimed |
| CN-115611782-A | High-acid-production oxime sulfonate photoacid generator and application of resist composition thereof | 瑞红(苏州)电子化学品股份有限公司 | 2023-01-17 | — | — | CN | claimed |
| CN-114253072-A | KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2022-03-29 | — | — | CN | claimed |
| CN-114236965-A | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2022-03-25 | — | — | CN | claimed |
| CN-109082021-A | Polymer resin composition and application thereof in high-frequency circuit board | 广东生益科技股份有限公司 | 2018-12-25 | — | — | CN | claimed |
| CN-109082020-A | Polymer resin composition and application thereof in high-frequency circuit board | 广东生益科技股份有限公司 | 2018-12-25 | — | — | CN | claimed |
| CN-109082019-A | A kind of fluoropolymer resin and its application in high-frequency circuit board | 广东生益科技股份有限公司 | 2018-12-25 | — | — | CN | claimed |
| EP-3346515-A1 | ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD | FUJI-FILM Corporation (JP) | 2018-07-11 | — | — | EP | claimed |
| US-10008671-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2018-06-26 | — | — | US | claimed |
| US-20180175300-A1 | ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM | FUJIFILM CORPORATION (JP) | 2018-06-21 | — | — | US | claimed |
| EP-3116030-A1 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME | Fujifilm Corporation (JP) | 2017-01-11 | — | — | EP | claimed |
| EP-3116032-A1 | ORGANIC THIN-FILM TRANSISTOR | Fujifilm Corporation (JP) | 2017-01-11 | — | — | EP | claimed |
| US-20160372663-A1 | ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | claimed |
| US-20040241574-A1 | Organoelement resists for EUV lithography and methods of making the same | CORNELL RESEARCH FOUNDATION, INC. | 2004-12-02 | — | — | US | claimed |
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-26 | — | — | US | disclosed |
| CN-119220083-A | Polyurethane shoe material and preparation method thereof | 广东康诚新材料科技股份有限公司 | 2024-12-31 | — | — | CN | disclosed |
| CN-115611874-B | Oxime sulfonate photoacid, resist composition containing oxime sulfonate photoacid, electronic device and application of oxime sulfonate photoacid | 常州强力先端电子材料有限公司 | 2024-12-13 | — | — | CN | disclosed |
| US-20240371640-A1 | UNDERLAYER OF MULTILAYER STRUCTURE AND METHODS OF USE THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| CN-118829945-A | Ion-implanted thick film resist composition, method for manufacturing processed substrate using the same, and method for manufacturing device using the same | 默克专利有限公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-118818901-A | KrF negative photoresist and preparation method and patterning forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-118818901-A | KrF negative photoresist and preparation method and patterning forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-114253072-B | KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2024-10-15 | — | — | CN | disclosed |
| CN-115109046-B | Imide sulfonate photoacid generator with high acid yield, composition and application | 常州强力先端电子材料有限公司 | 2024-09-03 | — | — | CN | disclosed |
| US-12074027-B2 | Underlayer of multilayer structure and methods of use thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-08-27 | — | — | US | disclosed |
| CN-114236965-B | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2024-07-26 | — | — | CN | disclosed |
| CN-114236965-B | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2024-07-26 | — | — | CN | disclosed |
| CN-114516863-B | Imide sulfonate photoacid generator with high acid yield, composition and application | 常州强力电子新材料股份有限公司 | 2024-06-21 | — | — | CN | disclosed |
| CN-115368285-B | oxime sulfonate photoacid generator with high acid yield | 常州强力先端电子材料有限公司 | 2024-03-26 | — | — | CN | disclosed |
| CN-117724293-A | KrF negative photoresist, preparation method thereof and patterning method | 北京科华微电子材料有限公司 | 2024-03-19 | — | — | CN | disclosed |
| CN-115368287-B | I-line oxime sulfonate photoacid generator with high acid yield | 常州强力先端电子材料有限公司 | 2024-03-19 | — | — | CN | disclosed |
| CN-115368341-B | Oxime sulfonate compound, resist composition containing oxime sulfonate compound, electronic device and application of oxime sulfonate compound | 常州强力先端电子材料有限公司 | 2024-01-26 | — | — | CN | disclosed |
| CN-115368340-B | Oxime sulfonate photoacid generator, resist composition containing oxime sulfonate photoacid generator, electronic device and application of oxime sulfonate photoacid generator | 常州强力先端电子材料有限公司 | 2024-01-26 | — | — | CN | disclosed |
| CN-109557764-B | Chemically amplified positive photosensitive resin composition, resist pattern, method for forming the same, and electronic device | 奇美实业股份有限公司 | 2023-09-12 | — | — | CN | disclosed |
| CN-116430667-A | Method for manufacturing EUV photomask | 台湾积体电路制造股份有限公司 | 2023-07-14 | — | — | CN | disclosed |
| WO-2023127692-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2023-07-06 | — | — | WO | disclosed |
| CN-116283945-A | Imide sulfonate photoacid generator, resist composition, application thereof and electronic component | 瑞红(苏州)电子化学品股份有限公司 | 2023-06-23 | — | — | CN | disclosed |
| US-20230161240-A1 | MANUFACTURING METHOD OF EUV PHOTO MASKS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-25 | — | — | US | disclosed |
| US-20230146910-A1 | METHODS AND COMPOSITIONS FOR IMPROVED PATTERNING OF PHOTORESIST | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-11 | — | — | US | disclosed |
| CN-116009357-A | Methods and compositions for improving photoresist patterning | 台湾积体电路制造股份有限公司 | 2023-04-25 | — | — | CN | disclosed |
| CN-111855581-B | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2023-04-14 | — | — | CN | disclosed |
| CN-115745865-A | Imide sulfonate photoacid, resist composition, electronic device, and application | 常州强力电子新材料股份有限公司 | 2023-03-07 | — | — | CN | disclosed |
| US-11567072-B2 | Ligand bound MBP membranes, uses and method of manufacturing | TERAPORE TECHNOLOGIES, INC. (US) | 2023-01-31 | — | — | US | disclosed |
| CN-115650886-A | Oxime sulfonate photoacid generators and use of resist compositions | 瑞红(苏州)电子化学品股份有限公司 | 2023-01-31 | — | — | CN | disclosed |
| CN-115611782-A | High-acid-production oxime sulfonate photoacid generator and application of resist composition thereof | 瑞红(苏州)电子化学品股份有限公司 | 2023-01-17 | — | — | CN | disclosed |
| CN-115611874-A | Oxime sulfonate photoacid, resist composition containing the same, electronic device, and use | 常州强力先端电子材料有限公司 | 2023-01-17 | — | — | CN | disclosed |
| US-20220392764-A1 | UNDERLAYER OF MULTILAYER STRUCTURE AND METHODS OF USE THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-08 | — | — | US | disclosed |
| CN-115410989-A | Lower layer of multilayer structure and method of using the same | 台湾积体电路制造股份有限公司 | 2022-11-29 | — | — | CN | disclosed |
| CN-115368340-A | Oxime sulfonate photoacid generators, resist compositions containing the same, electronic devices, and applications | 常州强力先端电子材料有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115368285-A | Oxime sulfonate photo-acid generator with high acid yield | 常州强力先端电子材料有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115368287-A | I-line oxime sulfonate photo-acid generator with high acid yield | 常州强力先端电子材料有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115368341-A | Oxime sulfonate compound, resist composition containing the same, electronic device and use | 常州强力先端电子材料有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115368286-A | Oxime sulfonate photo-acid generator with high acid yield | 常州强力先端电子材料有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115280201-A | Laminated film, polarizing plate, display device, and method for manufacturing polarizing plate roll | 柯尼卡美能达株式会社 | 2022-11-01 | — | — | CN | disclosed |
| CN-115109046-A | Imide sulfonate photo-acid generator with high acid yield, composition and application | 常州强力先端电子材料有限公司 | 2022-09-27 | — | — | CN | disclosed |
| US-11351509-B2 | Filter with seal treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-07 | — | — | US | disclosed |
| US-20220163888-A1 | POSITIVE TYPE RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2022-05-26 | — | — | US | disclosed |
| CN-114516863-A | Imide sulfonate photo-acid generator with high acid yield, composition and application | 常州强力电子新材料股份有限公司 | 2022-05-20 | — | — | CN | disclosed |
| CN-114253072-A | KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2022-03-29 | — | — | CN | disclosed |
| CN-114236965-A | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2022-03-25 | — | — | CN | disclosed |
| CN-114236965-A | Etching-resistant KrF photoresist and preparation method thereof | 苏州瑞红电子化学品有限公司 | 2022-03-25 | — | — | CN | disclosed |
| CN-111855581-A | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| US-20200232978-A1 | LIGAND BOUND MBP MEMBRANES, USES AND METHOD OF MANUFACTURING | TERAPORE TECHNOLOGIES, INC. (US) | 2020-07-23 | — | — | US | disclosed |
| WO-2020145043-A1 | SULFONIUM SALT, PHOTOACID GENERATOR, CURABLE COMPOSITION AND RESIST COMPOSITION | サンアプロ株式会社 | 2020-07-16 | — | — | WO | disclosed |
| US-10600680-B2 | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-03-24 | — | — | US | disclosed |
| US-10256139-B2 | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-04-09 | — | — | US | disclosed |
| US-20190043754-A1 | CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-02-07 | — | — | US | disclosed |
| US-20180244518-A1 | METHOD OF ASSEMBLING NANOSCALE AND MICROSCALE OBJECTS INTO THREE-DIMENSIONAL STRUCTURES | THE CHARLES STARK DRAPER LABORATORY, INC. | 2018-08-30 | — | — | US | disclosed |
| WO-2018156731-A1 | LIGAND BOUND MBP MEMBRANES, USES AND METHOD OF MANUFACTURING | DORIN RACHEL M (US) | 2018-08-30 | — | — | WO | disclosed |
| US-10059820-B2 | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-08-28 | — | — | US | disclosed |
| US-10037398-B2 | Pattern decomposition method for wiring patterns with chemoepitaxy based directed self assembly | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-07-31 | — | — | US | disclosed |
| EP-3346515-A1 | ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD | FUJI-FILM Corporation (JP) | 2018-07-11 | — | — | EP | disclosed |
| US-10008671-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20180175300-A1 | ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM | FUJIFILM CORPORATION (JP) | 2018-06-21 | — | — | US | disclosed |
| US-9904167-B2 | Compound, active light sensitive or radiation sensitive resin composition, resist film using same, resist-coated mask blank, photomask, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20170344691-A1 | PATTERN DECOMPOSITION METHOD FOR WIRING PATTERNS WITH CHEMOEPITAXY BASED DIRECTED SELF ASSEMBLY | GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE | 2017-11-30 | — | — | US | disclosed |
| US-20170321025-A1 | HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-11-09 | — | — | US | disclosed |
| US-9738765-B2 | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-08-22 | — | — | US | disclosed |
| US-20170194196-A1 | CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-07-06 | — | — | US | disclosed |
| US-9646883-B2 | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-05-09 | — | — | US | disclosed |
| EP-3116030-A1 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME | Fujifilm Corporation (JP) | 2017-01-11 | — | — | EP | disclosed |
| EP-3116032-A1 | ORGANIC THIN-FILM TRANSISTOR | Fujifilm Corporation (JP) | 2017-01-11 | — | — | EP | disclosed |
| US-20160372663-A1 | ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-20160365280-A1 | CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2016-12-15 | — | — | US | disclosed |
| US-9488911-B2 | Photosensitive composition, photocurable composition, chemical amplification resist composition, resist film, pattern forming method, method of manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-08 | — | — | US | disclosed |
| WO-2016132248-A1 | HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-08-25 | — | — | WO | disclosed |
| US-20160244581-A1 | HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2016-08-25 | — | — | US | disclosed |
| US-20160116840-A1 | COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-04-28 | — | — | US | disclosed |
| US-9316915-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-19 | — | — | US | disclosed |
| US-20150362836-A1 | PHOTOSENSITIVE COMPOSITION, PHOTOCURABLE COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-17 | — | — | US | disclosed |
| US-9159558-B2 | Methods of reducing defects in directed self-assembled structures | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-10-13 | — | — | US | disclosed |
| US-9107291-B2 | Formation of a composite pattern including a periodic pattern self-aligned to a prepattern | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-08-11 | — | — | US | disclosed |
| US-20150195916-A1 | FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-07-09 | — | — | US | disclosed |
| US-20150147698-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-28 | — | — | US | disclosed |
| US-9023587-B2 | Negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8877432-B2 | Method of forming resist pattern and resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-11-04 | — | — | US | disclosed |
| US-20140273476-A1 | METHODS OF REDUCING DEFECTS IN DIRECTED SELF-ASSEMBLED STRUCTURES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-09-18 | — | — | US | disclosed |
| WO-2014120320-A2 | FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-08-07 | — | — | WO | disclosed |
| US-20140212810-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-31 | — | — | US | disclosed |
| US-8703383-B2 | Photosensitive copolymer and photoresist composition | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-04-22 | — | — | US | disclosed |
| EP-1693705-B1 | Positive resist composition and pattern forming method using the resist composition | FUJIFILM CORP (JP) | 2014-01-22 | — | — | EP | disclosed |
| US-8426101-B2 | Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20130089821-A1 | RESIST PATTERN FORMATION METHOD AND PATTERN MINIATURIZATION AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-8404427-B2 | Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8389204-B2 | Method for producing comb-shaped electrode | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| EP-1406122-B1 | PHOTOSENSITIVE COMPOSITION AND ACID GENERATOR | FUJIFILM CORP (JP) | 2013-01-09 | — | — | EP | disclosed |
| US-8263322-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-11 | — | — | US | disclosed |
| US-8206886-B2 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2012-06-26 | — | — | US | disclosed |
| US-20120129105-A1 | PHOTOSENSITIVE COPOLYMER AND PHOTORESIST COMPOSITION | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| EP-2455812-A2 | Photosensitive copolymer and photoresist composition | Rohm and Haas Electronic Materials LLC (US) | 2012-05-23 | — | — | EP | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| EP-2399168-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM Corporation (JP) | 2011-12-28 | — | — | EP | disclosed |
| US-8084183-B2 | Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-12-27 | — | — | US | disclosed |
| US-20110262872-A1 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-8039200-B2 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| EP-2375285-A2 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJIFILM Corporation (JP) | 2011-10-12 | — | — | EP | disclosed |
| US-8021819-B2 | Sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-09-20 | — | — | US | disclosed |
| WO-2010150917-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-29 | — | — | WO | disclosed |
| US-7858287-B2 | Photosensitive resin, and photosensitive composition | HYOGO PREFECTURE (JP) | 2010-12-28 | — | — | US | disclosed |
| US-7851130-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-12-14 | — | — | US | disclosed |
| US-20100304300-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-12-02 | — | — | US | disclosed |
| EP-1816519-B1 | Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition | FUJIFILM CORP (JP) | 2010-11-03 | — | — | EP | disclosed |
| US-7816072-B2 | Positive resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-19 | — | — | US | disclosed |
| US-7807329-B2 | Photosensitive composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2010-10-05 | — | — | US | disclosed |
| US-20100239978-A1 | PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-7749679-B2 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-07-06 | — | — | US | disclosed |
| US-20100167217-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-1117002-B1 | Negative-working resist composition | FUJIFILM CORP (JP) | 2010-04-14 | — | — | EP | disclosed |
| EP-1703326-B1 | Photosensitive composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2010-03-10 | — | — | EP | disclosed |
| EP-2144116-A1 | Chemically-amplified positive resist composition and patterning process thereof | Shinetsu Chemical Co., Ltd. (JP) | 2010-01-13 | — | — | EP | disclosed |
| US-20090142697-A1 | PHOTOSENSITIVE RESIN, AND PHOTOSENSITIVE COMPOSITION | TOYO GOSEI CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| EP-1755365-B1 | Positive photosensitive insulating resin composition, cured product thereof, and electronic component | JSR CORP (JP) | 2009-05-06 | — | — | EP | disclosed |
| US-7527911-B2 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-05-05 | — | — | US | disclosed |
| US-7524609-B2 | Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-04-28 | — | — | US | disclosed |
| US-20090068594-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090047598-A1 | RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| EP-2020617-A2 | Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound | FUJIFILM Corporation (JP) | 2009-02-04 | — | — | EP | disclosed |
| EP-2020616-A2 | Resist composition for electron beam, x-ray, or euv, and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2009-02-04 | — | — | EP | disclosed |
| EP-1767993-B1 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORP (JP) | 2008-12-24 | — | — | EP | disclosed |
| US-20080166657-A1 | Resist composition for bulkhead formation, bulkhead of EL display device and EL display device | SUGIMOTO YASUAKI | 2008-07-10 | — | — | US | disclosed |
| EP-1076261-B1 | Negative resist composition | FUJIFILM CORP (JP) | 2008-06-25 | — | — | EP | disclosed |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7332254-B2 | Positive photosensitive insulating resin composition, cured product thereof, and electronic component | JSR CORPORATION (JP) | 2008-02-19 | — | — | US | disclosed |
| US-7326514-B2 | Organoelement resists for EUV lithography and methods of making the same | CORNELL RESEARCH FOUNDATION, INC. (US) | 2008-02-05 | — | — | US | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| WO-2007148822-A1 | POLYFUNCTIONAL EPOXY COMPOUND, EPOXY RESIN, CATIONIC PHOTOPOLYMERIZABLE EPOXY RESIN COMPOSITION, MICRO STRUCTURED MEMBER, PRODUCING METHOD THEREFOR AND LIQUID DISCHARGE HEAD | CANON KABUSHIKI KAISHA (JP) | 2007-12-27 | — | — | WO | disclosed |
| WO-2007124092-A2 | PHOTOACID GENERATOR COMPOUNDS AND COMPOSITIONS | CORNELL RESEARCH FOUNDATION, INC. (US) | 2007-11-01 | — | — | WO | disclosed |
| US-20070212645-A1 | Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-09-13 | — | — | US | disclosed |
| US-20070196766-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-08-23 | — | — | US | disclosed |
| US-20070184384-A1 | Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-08-09 | — | — | US | disclosed |
| EP-1816519-A1 | Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition | FUJIFILM Corporation (JP) | 2007-08-08 | — | — | EP | disclosed |
| US-20070148592-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070141512-A1 | Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-21 | — | — | US | disclosed |
| EP-1767993-A1 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2007-03-28 | — | — | EP | disclosed |
| US-20070059632-A1 | Method of manufacturing a semiconductor device | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2007-03-15 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070054217-A1 | Positive photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-08 | — | — | US | disclosed |
| US-20070042296-A1 | POSITIVE PHOTOSENSITIVE INSULATING RESIN COMPOSITION, CURED PRODUCT THEREOF, AND ELECTRONIC COMPONENT | JSR CORPORATION (JP) | 2007-02-22 | — | — | US | disclosed |
| EP-1755365-A1 | Positive photosensitive insulating resin composition, cured product thereof, and electronic component | JSR Corporation (JP) | 2007-02-21 | — | — | EP | disclosed |
| US-7157205-B2 | Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-20060281023-A1 | Negative photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-12-14 | — | — | US | disclosed |
| US-20060210919-A1 | Photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2006-09-21 | — | — | US | disclosed |
| EP-1703326-A2 | Photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-20 | — | — | EP | disclosed |
| US-7105273-B2 | High energy beams lithography; mixture of water insoluble phenolic resin and acid generator | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-12 | — | — | US | disclosed |
| US-20060194147-A1 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. | 2006-08-31 | — | — | US | disclosed |
| EP-1693705-A2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2006-08-23 | — | — | EP | disclosed |
| US-7094515-B2 | Stimulus sensitive compound and stimulus sensitive composition containing the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-08-22 | — | — | US | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| US-7033727-B2 | Photosensitive composition and acid generator | FUJI PHOTO FILM CO., LTD. (JP) | 2006-04-25 | — | — | US | disclosed |
| EP-1635218-A2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2006-03-15 | — | — | EP | disclosed |
| US-20050266336-A1 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2005-12-01 | — | — | US | disclosed |
| EP-1591832-A2 | Photosensitive composition, compound used in the same, and patterning method using the same | Fuji Photo Film Co., Ltd. (JP) | 2005-11-02 | — | — | EP | disclosed |
| US-20050236967-A1 | Resist composition for separator formation, separator of EL display device and EL display device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-27 | — | — | US | disclosed |
| US-20050238992-A1 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJI PHOTO FILM CO., LTD. | 2005-10-27 | — | — | US | disclosed |
| US-6936401-B2 | Pattern formation material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-30 | — | — | US | disclosed |
| EP-1566692-A1 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |
| US-20050095532-A1 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2005-05-05 | — | — | US | disclosed |
| EP-1517179-A1 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2005-03-23 | — | — | EP | disclosed |
| US-20050003299-A1 | Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate | FUJI PHOTO FILM CO., LTD. | 2005-01-06 | — | — | US | disclosed |
| US-20040241574-A1 | Organoelement resists for EUV lithography and methods of making the same | CORNELL RESEARCH FOUNDATION, INC. | 2004-12-02 | — | — | US | disclosed |
| US-20040185378-A1 | Stimulus sensitive compound and stimulus sensitive composition containing the same | FUJI PHOTO FILM CO., LTD. | 2004-09-23 | — | — | US | disclosed |
| US-20040072097-A1 | Photosensitive composition and acid generator | FUJI PHOTO FILM CO., LTD. | 2004-04-15 | — | — | US | disclosed |
| EP-1406122-A2 | Photosensitive composition and acid generator | FUJI PHOTO FILM CO., LTD. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20040043323-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2004-03-04 | — | — | US | disclosed |
| US-6673512-B1 | PHOTORESISTS COMPRISING HOMO(CO)POLYCARBONS, ACID GENERATORS, CURING AGENTS AND BASES, USED TO FORM MINIATURIZED PATTERNS ON SEMICONDUCTORS USING X-RAYS OR RADIATION BEAMS; HIGH SENSITIVITY AND RESOLUTION | FUJI PHOTO FILM CO., LTD. (JP) | 2004-01-06 | — | — | US | disclosed |
| US-6673516-B2 | Coating composition for chemically amplified positive resist and method of patterning resist using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-01-06 | — | — | US | disclosed |
| US-6638683-B1 | Mixtures of polyhydroxystyrenes and/or copolymers, acid generators and solvents used for masking high resolution patterns on semiconductor integrated circuits, printed circuit or liquid crystal panels | FUJI PHOTO FILM CO., LTD. (JP) | 2003-10-28 | — | — | US | disclosed |
| US-6630280-B1 | Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness | FUJI PHOTO FILM CO., LTD. (JP) | 2003-10-07 | — | — | US | disclosed |
| EP-0887707-B1 | Positive photoresist composition | FUJI PHOTO FILM CO LTD (JP) | 2003-09-03 | — | — | EP | disclosed |
| US-6544712-B1 | Sensitivity, resist pattern profile, and aging stability; suitable to fine processing with radiations such as ultraviolet rays, excimer laser, x-rays, electron beams | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-04-08 | — | — | US | disclosed |
| US-6511783-B1 | Triphenylsulfonium acid generators; phenolic crosslinking agent; amplification; photosensitivity, resolution | FUJI PHOTO FILM CO., LTD. (JP) | 2003-01-28 | — | — | US | disclosed |
| US-6489080-B2 | CONTAINING ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2002-12-03 | — | — | US | disclosed |
| US-20020058206-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| US-20020055063-A1 | Coating composition for chemically amplified positive resist and method of patterning resist using the same | TOKYO OHKA KOGYO CO., LTD. | 2002-05-09 | — | — | US | disclosed |
| EP-1193556-A1 | Positive resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20020015916-A1 | POSITIVE RESIST COMPOSITION | FUJI PHOTO FILM CO., LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| EP-0794457-B1 | Positive working photosensitive composition | FUJI PHOTO FILM CO LTD (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1117002-A1 | Negative-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1076261-A1 | Negative resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2001-02-14 | — | — | EP | disclosed |
| US-6136504-A | COMPRISING A COPOLYMER, A COMPOUND WHICH GENERATES AN ACID WHEN IRRADIATED WITH ACTINIC RAYS OR RADIATION, AND A SOLVENT | FUJI PHOTO FILM CO., LTD. (JP) | 2000-10-24 | — | — | US | disclosed |
| US-6043003-A | SOME OF THE POLAR FUNCTIONAL GROUPS OF THE AQUEOUS BASE SOLUBLE POLYMER OR COPOLYMERS ARE PROTECTED WITH A CYCLIC ALIPHATIC KETAL PROTECTING GROUP SUCH AS METHOXYCYCLOHEXANYL. | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-28 | — | — | US | disclosed |
| US-6037097-A | A CYCLIC ALIPHATIC KETAL SUBSTITUENT E.G. METHOXYCYCLOHEXANYL AS AN ACID-LABILE PROTECTING GROUP FOR AN AQUEOUS BASE SOLUBLE POLYMER, E.G. A POLYHYDROXYSTYRENE; SHELF-LIFE; VACUUM STABILITY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-14 | — | — | US | disclosed |
| US-5955241-A | Chemical-amplification-type negative resist composition and method for forming negative resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-09-21 | — | — | US | disclosed |
| EP-0932082-A2 | Chemically amplified resist composition and method of creating a patterned resist using electron beam | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-07-28 | — | — | EP | disclosed |
| EP-0887707-A1 | Positive photoresist composition | FUJI PHOTO FILM CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
| US-5837420-A | USED IN MANUFACTURING OF LITHOGRAPHIC PRINTING PLATE, INTEGRATED CIRCUITS, CIRCUIT SUBSTRATE FOR LIQUID CRYSTAL, THERMAL HEAD | FUJI PHOTO FILM CO., LTD. (JP) | 1998-11-17 | — | — | US | disclosed |
| EP-0794457-A2 | Positive working photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 1997-09-10 | — | — | EP | disclosed |
| EP-0614120-B1 | A source of photochemically generated acid for microelectronic photoresists | MORTON INT INC (US) | 1997-04-16 | — | — | EP | disclosed |
| US-5545509-A | INTEGRATED CIRCUITS; HIGH DENSITY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-08-13 | — | — | US | disclosed |
| EP-0599571-B1 | Photoresist composition | IBM (US) | 1996-03-27 | — | — | EP | disclosed |
| EP-0614120-A1 | A source of photochemically generated acid for microelectronic photoresists | MORTON INTERNATIONAL, INC. (US) | 1994-09-07 | — | — | EP | disclosed |
| EP-0599571-A2 | Photoresist composition | International Business Machines Corporation (US) | 1994-06-01 | — | — | EP | disclosed |
| US-5308744-A | Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives | MORTON INTERNATIONAL, INC. (US) | 1994-05-03 | — | — | US | disclosed |
| US-5079093-A | Two layer polymeric coating wherein layers react with each other | TORAY INDUSTRIES, INC. (JP) | 1992-01-07 | — | — | US | disclosed |
| US-5079093-A | Two layer polymeric coating wherein layers react with each other | TORAY INDUSTRIES, INC. (JP) | 1992-01-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110262872-A1 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION | POLR1A, PARG, POLR1G | MAPT 2945/4885ALDH1A1 2487/4885LMNA 482/4885 |
| US-20160116840-A1 | COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | CHRM1, ESR1, RER1 | MAPT 1842/4885ALDH1A1 3574/4885LMNA 2258/4885 |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | PPOX, TYR, ERCC4 | MAPT 1254/4885ALDH1A1 1523/4885LMNA 3982/4885 |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | ADH5, SRRM2, ADH1A | MAPT 4291/4885ALDH1A1 1228/4885LMNA 3834/4885 |
| US-20150362836-A1 | PHOTOSENSITIVE COMPOSITION, PHOTOCURABLE COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | POLQ, POLR1A, POLI | MAPT 302/4885ALDH1A1 743/4885LMNA 1543/4885 |
| US-10008671-B2 | Organic thin-film transistor and method for manufacturing same | TET1, FTO, TET2 | MAPT 266/4885ALDH1A1 2895/4885LMNA 4773/4885 |
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | DSG1, SCO2, ERCC1 | MAPT 1537/4885ALDH1A1 1401/4885LMNA 606/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.