Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.34 |
| ▸ | SCN1A | P35498 | 1/20 | 0.34 |
| ▸ | SCN2A | Q99250 | 1/20 | 0.34 |
| ▸ | SCN3A | Q9NY46 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | TP53 | P04637 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.32 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.32 |
| ▸ | MGLL | Q99685 | 4/20 | 0.31 |
| ▸ | FAAH | O00519 | 3/20 | 0.31 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
| ▸ | PRKCA | P17252 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL547058 | 0.87 | LMNA (0.36) | LMNACYP1A2CYP2D6SCN1ASCN2A | |
| SCHEMBL4202375 | 0.83 | HSD11B1 (0.38) | LMNAKMT2AMEN1POLBHSD11B1 | |
| SCHEMBL4992652 | 0.79 | HSD11B1 (0.36) | LMNAKMT2AMEN1TSHRPOLB | |
| SCHEMBL482418 | 0.77 | CA1 (0.34) | KMT2AMEN1POLBHSD11B1 | |
| SCHEMBL10144812 | 0.74 | TSHR (0.42) | LMNAKMT2AMEN1TP53TSHR | |
| SCHEMBL2882269 | 0.74 | TSHR (0.42) | LMNAKMT2AMEN1TP53TSHR | |
| SCHEMBL382685 | 0.73 | TSHR (0.47) | LMNAKMT2AMEN1TP53TSHR | |
| Hydrogen Sulfide SCHEMBL2882266 | 0.72 | TSHR (0.46) | LMNAKMT2AMEN1TP53TSHR | |
| SCHEMBL482458 | 0.72 | TSHR (0.46) | LMNAKMT2AMEN1TP53TSHR | |
| SCHEMBL19042453 | 0.71 | TSHR (0.45) | LMNAKMT2ATP53TSHRPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-9023582-B2 | Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition | SAMSUNG DISPLAY CO., LTD. (KR) | 2015-05-05 | — | — | US | disclosed |
| EP-2146247-B1 | Resist patterning process and manufacturing photo mask | SHINETSU CHEMICAL CO (JP) | 2015-04-15 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-20140141372-A1 | PHOTOSENSITIVE POLYMER, RESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER AND METHOD OF PREPARING RESIST PATTERN USING THE RESIST COMPOSITION | SAMSUNG DISPLAY CO., LTD. (KR) | 2014-05-22 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | LMNA 1522/4885CYP1A2 2364/4885CYP2D6 3499/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | LMNA 3551/4885CYP1A2 1178/4885CYP2D6 772/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | LMNA 3638/4885CYP1A2 1586/4885CYP2D6 1250/4885 |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | ESR1, H1-2, H1-4 | LMNA 813/4885CYP1A2 392/4885CYP2D6 1595/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | LMNA 3936/4885CYP1A2 1222/4885CYP2D6 1160/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.