SCHEMBL678084

SCHEMBL678084

CC(C)(C)c1ccc([S+](c2ccc(C(C)(C)C)cc2)c2ccc(C(C)(C)C)cc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C1CC2CCC1C2

nearest known ligand 0.40

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 15/20 0.40
ACHE P22303 1/20 0.34
LMNA P02545 1/20 0.34
GAA P10253 1/20 0.34
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL678432 0.96 HSD11B1 (0.37) HSD11B1ACHELMNAGAAALDH1A1
SCHEMBL447679 0.87 HSD11B1 (0.40) HSD11B1ACHELMNAGAA
SCHEMBL383093 0.85 L3MBTL1 (0.35) LMNAALDH1A1
SCHEMBL448748 0.83 ALDH1A1 (0.33) LMNAALDH1A1
SCHEMBL5651472 0.83 ESR2 (0.32) ALDH1A1
SCHEMBL5645680 0.81 MEN1 (0.34) ALDH1A1
SCHEMBL4994429 0.79 HSP90AA1 (0.32)
SCHEMBL447065 0.78 LMNA (0.37) LMNAALDH1A1
SCHEMBL29745790 0.78 ALDH1A1 (0.44) HSD11B1ACHELMNAGAAALDH1A1
SCHEMBL5649768 0.78 MMP8 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9348226-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2016-05-24 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-20150160556-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-06-11 US disclosed
US-8993223-B2 Resist pattern-forming method JSR CORPORATION (JP) 2015-03-31 US disclosed
US-20150050600-A9 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-02-19 US disclosed
US-8956807-B2 Method for forming resist pattern, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-02-17 US disclosed
US-7704669-B2 Acrylic polymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2010-04-27 US disclosed
US-20090299008-A1 Organic antimony compound, process for producing the same, living radical polymerization initiator, process for producing polymer using the same, and polymer OTSUKA CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20070269754-A1 Acrylic Polymer and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-20070265404-A1 Organic Bismuth Compound, Method for Producing Same, Living Radical Polymerization Initiator, Method for Producing Polymer Using Same, and Polymer OTSUKA CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
EP-1829883-A1 ORGANIC BISMUTH COMPOUND, METHOD FOR PRODUCING SAME, LIVING RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING POLYMER USING SAME, AND POLYMER Otsuka Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
EP-1767539-A1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL COMPANY, LTD. (JP) 2007-03-28 EP disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1652866-A1 ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2006-05-03 EP disclosed
EP-1602975-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-12-07 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070265404-A1 Organic Bismuth Compound, Method for Producing Same, Living Radical Polymerization Initiator, Method for Producing Polymer Using Same, and Polymer DOHH, COASY, ODC1 HSD11B1 701/4885ACHE 1166/4885LMNA 2747/4885
US-20090299008-A1 Organic antimony compound, process for producing the same, living radical polymerization initiator, process for producing polymer using the same, and polymer AOC2, ODC1, MCM7 HSD11B1 3868/4885ACHE 352/4885LMNA 1912/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.