SCHEMBL383093

SCHEMBL383093

O=S(=O)([O-])C(F)(F)C(F)(F)C1CC2CCC1C2.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.35
HPGD P15428 3/20 0.33
ALDH1A1 P00352 2/20 0.32
SLC6A3 Q01959 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
BRS3 P32247 1/20 0.31
KDM4E B2RXH2 2/20 0.31
TSHR P16473 1/20 0.31
HSD17B10 Q99714 1/20 0.31
EPHX2 P34913 1/20 0.31
HSP90AA1 P07900 2/20 0.31
PSEN1 P49768 1/20 0.31
PSEN2 P49810 1/20 0.31
APH1B Q8WW43 1/20 0.31
NCSTN Q92542 1/20 0.31
APH1A Q96BI3 1/20 0.31
PSENEN Q9NZ42 1/20 0.31
LMNA P02545 1/20 0.31
HTT P42858 1/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5651472 0.94 ESR2 (0.32) L3MBTL1HPGDALDH1A1
SCHEMBL448748 0.92 ALDH1A1 (0.33) L3MBTL1HPGDALDH1A1SLC6A3KDM4E
SCHEMBL678432 0.91 HSD11B1 (0.37) ALDH1A1BRS3LMNA
SCHEMBL5645680 0.90 MEN1 (0.34) ALDH1A1TSHRHSD17B10MEN1KMT2A
SCHEMBL447065 0.89 LMNA (0.37) ALDH1A1SMN1; SMN2KDM4ETSHRHSD17B10
SCHEMBL5649768 0.88 MMP8 (0.32)
SCHEMBL5649250 0.87 MAOA (0.30)
SCHEMBL445082 0.86 HPGD (0.36) L3MBTL1HPGDALDH1A1SLC6A3SMN1; SMN2
SCHEMBL678084 0.85 HSD11B1 (0.40) ALDH1A1LMNA
SCHEMBL5649772 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 477 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2026-02-24 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
US-12386260-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2025-08-12 US disclosed
US-12265333-B2 Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound JSR CORPORATION (JP) 2025-04-01 US disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
EP-1600437-A1 ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2005-11-30 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
US-20040146802-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-29 US disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed
EP-1270553-A2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR Corporation (JP) 2003-01-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 L3MBTL1 1488/4885HPGD 4038/4885ALDH1A1 1639/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 L3MBTL1 358/4885HPGD 3721/4885ALDH1A1 189/4885
US-12265333-B2 Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound TOP1, RER1, ABCC1 L3MBTL1 3636/4885HPGD 4485/4885ALDH1A1 2120/4885
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound RAD51, RER1, RAD1 L3MBTL1 1449/4885HPGD 2523/4885ALDH1A1 345/4885
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA L3MBTL1 2359/4885HPGD 3253/4885ALDH1A1 1216/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.