SCHEMBL448748

SCHEMBL448748

CS(=O)(=O)c1ccc([S+](c2ccccc2)c2ccccc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C1CC2CCC1C2

nearest known ligand 0.33

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
PTGS2 P35354 8/20 0.33
NPY2R P49146 1/20 0.32
KDM4E B2RXH2 1/20 0.32
HPGD P15428 1/20 0.32
TSHR P16473 1/20 0.32
HSD17B10 Q99714 1/20 0.32
LMNA P02545 1/20 0.31
HTT P42858 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
GPR6 P46095 1/20 0.31
SLC6A3 Q01959 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.30
PTGS1 P23219 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL383093 0.92 L3MBTL1 (0.35) ALDH1A1KDM4EHPGDTSHRHSD17B10
SCHEMBL5651472 0.89 ESR2 (0.32) ALDH1A1HPGDL3MBTL1
SCHEMBL678432 0.88 HSD11B1 (0.37) ALDH1A1LMNA
SCHEMBL5645680 0.87 MEN1 (0.34) ALDH1A1TSHRHSD17B10MEN1KMT2A
SCHEMBL5649768 0.85 MMP8 (0.32)
SCHEMBL447065 0.84 LMNA (0.37) ALDH1A1KDM4ETSHRHSD17B10LMNA
SCHEMBL678084 0.83 HSD11B1 (0.40) ALDH1A1LMNA
SCHEMBL5649250 0.82 MAOA (0.30)
SCHEMBL5651655 0.79 PIK3CD (0.32)
SCHEMBL445082 0.79 HPGD (0.36) ALDH1A1KDM4EHPGDTSHRHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 208 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
WO-2024176973-A1 METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION 東京応化工業株式会社 2024-08-29 WO disclosed
EP-4405094-A1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X Genomics, Inc. (US) 2024-07-31 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110076619-A1 METHOD FOR MODIFYING FIRST FILM AND COMPOSITION FOR FORMING ACID TRANSFER RESIN FILM USED THEREFOR JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2011-02-03 US disclosed
US-20100190109-A1 ACID TRANSFER COMPOSITION, ACID TRANSFER FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20090053649-A1 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION 2009-02-26 US disclosed
US-7217492-B2 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2007-05-15 US disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed
US-20050053861-A1 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-03-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 ALDH1A1 1639/4885PTGS2 2352/4885NPY2R 1331/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 ALDH1A1 189/4885PTGS2 3407/4885NPY2R 1258/4885
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND SMARCC1, RXRA, RXRB ALDH1A1 1566/4885PTGS2 4163/4885NPY2R 2886/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 ALDH1A1 2935/4885PTGS2 2958/4885NPY2R 1408/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.