Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 15/20 | 0.40 |
| ▸ | ACHE | P22303 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | BRS3 | P32247 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL678084 | 0.87 | HSD11B1 (0.40) | HSD11B1ACHELMNAGAA | |
| SCHEMBL445082 | 0.85 | HPGD (0.36) | LMNABRS3 | |
| SCHEMBL678432 | 0.83 | HSD11B1 (0.37) | HSD11B1ACHELMNAGAABRS3 | |
| SCHEMBL4994429 | 0.80 | HSP90AA1 (0.32) | — | |
| SCHEMBL2799411 | 0.78 | HSD11B1 (0.42) | HSD11B1ACHELMNAGAA | |
| SCHEMBL2438900 | 0.76 | ALDH1A1 (0.42) | HSD11B1ACHELMNAGAA | |
| SCHEMBL447680 | 0.74 | HSD11B1 (0.37) | HSD11B1LMNAGAABRS3 | |
| SCHEMBL2797827 | 0.74 | HSD11B1 (0.39) | HSD11B1LMNAGAA | |
| Trifluoromethanesulfonic Acid SCHEMBL36627 | 0.74 | ALDH1A1 (0.46) | HSD11B1ACHELMNAGAA | |
| SCHEMBL383093 | 0.74 | L3MBTL1 (0.35) | LMNABRS3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 310 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | JSR CORPORATION (JP) | 2025-04-01 | — | — | US | disclosed |
| EP-4516394-A2 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2025-03-05 | — | — | EP | disclosed |
| EP-4481059-A2 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2024-12-25 | — | — | EP | disclosed |
| EP-4405094-B1 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-12-18 | — | — | EP | disclosed |
| EP-4271511-B1 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-10-09 | — | — | EP | disclosed |
| WO-2024176973-A1 | METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION | 東京応化工業株式会社 | 2024-08-29 | — | — | WO | disclosed |
| EP-4405094-A1 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10X Genomics, Inc. (US) | 2024-07-31 | — | — | EP | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| EP-1652866-A1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2006-05-03 | — | — | EP | disclosed |
| EP-1602975-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-12-07 | — | — | EP | disclosed |
| EP-1600437-A1 | ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-11-30 | — | — | EP | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| JP-2003337416-A | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP | 2003-11-28 | — | — | JP | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TERB1, TERF2, LSM8 | HSD11B1 3215/4885ACHE 4651/4885LMNA 1064/4885 |
| US-12624392-B2 | Molecular array generation using photoresist | POLL, LIG4, LIG3 | HSD11B1 3167/4885ACHE 4816/4885LMNA 637/4885 |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | TOP1, RER1, ABCC1 | HSD11B1 482/4885ACHE 1882/4885LMNA 1919/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | HSD11B1 3894/4885ACHE 4019/4885LMNA 3265/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.