SCHEMBL685869

SCHEMBL685869

C=C(C)c1ccc(OC(CC)OCC)cc1

nearest known ligand 0.35

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.33
MAPT P10636 3/20 0.32
PARP10 Q53GL7 2/20 0.32
PRSS1 P07477 1/20 0.32
PRSS2 P07478 1/20 0.32
PRSS3 P35030 1/20 0.32
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
ALDH1A1 P00352 1/20 0.31
POLB P06746 3/20 0.31
LMNA P02545 2/20 0.31
NPSR1 Q6W5P4 2/20 0.31
NR1I2 O75469 1/20 0.31
NPC1 O15118 1/20 0.30
PLK1 P53350 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6692471 0.87 L3MBTL1 (0.33) KMT2AMAPTPPARGPPARAPLK1
SCHEMBL6694149 0.87 TSHR (0.36) MAPTLMNANPC1
SCHEMBL6689712 0.87 TAS1R3 (0.36) KMT2AMAPTPARP10PRSS1PRSS2
SCHEMBL6691138 0.86 MAPT (0.37) KMT2AMAPTPARP10PPARGPPARA
SCHEMBL6698189 0.84 TP53 (0.41) MAPTLMNANPC1
SCHEMBL6689384 0.84 TAS1R3 (0.32)
SCHEMBL6699140 0.83 TP53 (0.43) MAPTLMNANPC1
SCHEMBL6695243 0.82 KMT2A (0.39) KMT2AMAPTPARP10ALDH1A1POLB
SCHEMBL685750 0.81 KMT2A (0.37) KMT2AMAPTPARP10PRSS1PRSS2
SCHEMBL6694754 0.81 KMT2A (0.31) KMT2AMAPTPARP10PPARGPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180022916-A1 METHOD OF PREPARING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-20180024433-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-14 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
EP-0959389-B1 Diazodisulfone compound and radiation-sensitive resin composition JSR CORP (JP) 2004-03-31 EP disclosed
US-6143460-A PHOTOACID GENERATOR PROVIDING IMPROVED PHOTORESIST RESOLUTION JSR CORPORATION (JP) 2000-11-07 US disclosed
EP-0959389-A1 Diazodisulfone compound and radiation-sensitive resin composition JSR Corporation (JP) 1999-11-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S KMT2A 807/4885MAPT 1824/4885PARP10 30/4885
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CLIC1, SLC10A6, APOL1 KMT2A 701/4885MAPT 1639/4885PARP10 3314/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.