Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL244365 | 0.96 | KMT2A (0.47) | KMT2ACA1CA2CA4 | |
| SCHEMBL686204 | 0.94 | CA1 (0.45) | KMT2ACA1CA2CA4 | |
| Trifluoromethanesulfonic Acid SCHEMBL6140329 | 0.84 | KMT2A (0.35) | KMT2ACA1CA2CA4 | |
| SCHEMBL3210568 | 0.83 | CA1 (0.50) | KMT2ACA1CA2CA4 | |
| Trifluoromethanesulfonic Acid SCHEMBL3958924 | 0.81 | KMT2A (0.35) | KMT2ACA1CA2CA4 | |
| SCHEMBL8166638 | 0.81 | KMT2A (0.35) | KMT2ACA1CA2CA4 | |
| Trifluoromethanesulfonic Acid SCHEMBL6140981 | 0.79 | CA1 (0.37) | KMT2ACA1CA2CA4 | |
| SCHEMBL3965098 | 0.76 | ALDH1A1 (0.41) | CA1CA2 | |
| SCHEMBL12422471 | 0.76 | KMT2A (0.38) | KMT2ACA1CA2CA4 | |
| SCHEMBL686045 | 0.75 | KMT2A (0.45) | KMT2ACA1CA2CA4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 118 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| EP-2891014-B1 | PATTERN FORMING METHOD, AND ELECTRONIC DEVICE PRODUCING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2017-11-29 | — | — | EP | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9527809-B2 | Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-9482947-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9429841-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9423689-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-9405187-B2 | Salt, acid generator and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-02 | — | — | US | disclosed |
| US-7527910-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20090042128-A1 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20080086014-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7304175-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070088131-A1 | Sulfonate and resist composition | TOISHI KOUJI | 2007-04-19 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | KMT2A 660/4885CA1 218/4885CA2 16/4885 |
| US-20090042128-A1 | Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group | FRG1, ACSL3, HCN3 | KMT2A 952/4885CA1 145/4885CA2 305/4885 |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | NHERF1, SLC26A3, HCN3 | KMT2A 1453/4885CA1 150/4885CA2 20/4885 |
| US-20080086014-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | HCN3, SLC26A3, KCNN4 | KMT2A 1210/4885CA1 67/4885CA2 11/4885 |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | KMT2A 3514/4885CA1 1973/4885CA2 4547/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | KMT2A 472/4885CA1 388/4885CA2 53/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.