SCHEMBL686567

SCHEMBL686567

O=C(OCC12CC3CC(CC(O)(C3)C1)C2)C(F)(F)S(=O)(=O)O

nearest known ligand 0.43

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SCN9A Q15858 4/20 0.39
MAPT P10636 1/20 0.39
HPGD P15428 1/20 0.39
ALDH1A1 P00352 3/20 0.34
THRB P10828 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA9 Q16790 1/20 0.31
PKM P14618 1/20 0.31
HSD11B1 P28845 2/20 0.31
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18467219 1.00 SCN9A (0.39) SCN9AMAPTHPGDALDH1A1THRB
SCHEMBL16106774 0.99 SCN9A (0.39) SCN9AMAPTHPGDALDH1A1THRB
SCHEMBL14294661 0.92 ALDH1A1 (0.37) SCN9AALDH1A1THRBMEN1KMT2A
SCHEMBL686181 0.92 SCN9A (0.37) SCN9AMAPTHPGDALDH1A1THRB
SCHEMBL12094575 0.91 SCN9A (0.35) SCN9AMAPTHPGD
SCHEMBL12094576 0.91 SCN9A (0.36) SCN9AMAPTHPGDALDH1A1THRB
SCHEMBL15463187 0.90 SCN9A (0.37) SCN9AMAPTHPGDALDH1A1THRB
SCHEMBL12094571 0.89 SCN9A (0.34) SCN9AMAPTHPGD
SCHEMBL787195 0.88 MAPT (0.30) SCN9AMAPTHPGD
SCHEMBL22399834 0.88 MAPT (0.30) SCN9AMAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 710 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12638775-B2 Methods and compositions for improved patterning of photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-05-26 US claimed
CN-119165732-B Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2025-01-28 CN claimed
CN-119165732-A Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2024-12-20 CN claimed
CN-117447885-B Photoresist top layer coating polymer, preparation method, composition and application 中节能万润股份有限公司 2024-04-09 CN claimed
US-12638775-B2 Methods and compositions for improved patterning of photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-05-26 US disclosed
CN-119165732-B Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2025-01-28 CN disclosed
CN-119165732-A Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2024-12-20 CN disclosed
US-20240241440-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20080086014-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-04-10 US disclosed
US-20080081293-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-04-03 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20060194982-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-08-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060194982-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same ASIC1, SLC9A1, NHERF1 SCN9A 39/4885MAPT 4186/4885HPGD 1733/4885
US-20080081293-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same HCN3, HCN1, NHERF1 SCN9A 475/4885MAPT 4878/4885HPGD 2994/4885
US-20080086014-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same HCN3, SLC26A3, KCNN4 SCN9A 310/4885MAPT 4834/4885HPGD 3185/4885
US-12638775-B2 Methods and compositions for improved patterning of photoresist DSG1, SCO2, ERCC1 SCN9A 3203/4885MAPT 1537/4885HPGD 3019/4885
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-0, HCN3, RER1 SCN9A 60/4885MAPT 4576/4885HPGD 1188/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 SCN9A 2749/4885MAPT 736/4885HPGD 4208/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.