SCHEMBL686775

SCHEMBL686775

CC1(OC(=O)COC(=O)C(F)(F)S(=O)(=O)O)C2CC3CC(C2)CC1C3

nearest known ligand 0.39

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.39
CYP19A1 P11511 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13195566 0.97 CYP17A1 (0.37) CYP17A1CYP19A1
SCHEMBL13195558 0.89 CYP17A1 (0.35) CYP17A1CYP19A1
SCHEMBL13195562 0.89 CYP17A1 (0.34) CYP17A1CYP19A1
SCHEMBL686270 0.88 CYP17A1 (0.37) CYP17A1CYP19A1
SCHEMBL786626 0.88 CYP17A1 (0.37) CYP17A1CYP19A1
SCHEMBL786326 0.86 CYP17A1 (0.44) CYP17A1CYP19A1
SCHEMBL686562 0.86
SCHEMBL12673642 0.86 CYP17A1 (0.31) CYP17A1CYP19A1
SCHEMBL14701405 0.85 CYP17A1 (0.35) CYP17A1CYP19A1
SCHEMBL10234532 0.85 ALDH1A1 (0.37) CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 285 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11782342-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-10 US disclosed
US-20230314939-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-05 US disclosed
US-7572570-B2 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-11 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7439006-B2 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-21 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, LPAR1, TLR7 CYP17A1 2020/4885CYP19A1 2713/4885
US-11782342-B2 Salt and photoresist composition containing the same CRY1, REN, SLC6A19 CYP17A1 930/4885CYP19A1 2894/4885
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP CYP17A1 3868/4885CYP19A1 3274/4885
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SLC26A3, HCN3, NHERF1 CYP17A1 326/4885CYP19A1 520/4885
US-20230314939-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-10, H1-0, HCAR1 CYP17A1 2849/4885CYP19A1 3561/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 CYP17A1 3322/4885CYP19A1 2818/4885
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, H1-2 CYP17A1 1557/4885CYP19A1 2719/4885
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, CHRM1 CYP17A1 1937/4885CYP19A1 2186/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 CYP17A1 3270/4885CYP19A1 1624/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 CYP17A1 2125/4885CYP19A1 2819/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.