Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL704515 | 0.91 | — | — | |
| SCHEMBL703936 | 0.88 | PRKCA (0.37) | PRKCAPRKCD | |
| SCHEMBL710832 | 0.86 | — | — | |
| SCHEMBL702168 | 0.86 | LAP3 (0.33) | PRKCAPRKCD | |
| SCHEMBL707559 | 0.83 | BDKRB2 (0.32) | PRKCAPRKCD | |
| SCHEMBL705493 | 0.82 | SLC2A1 (0.33) | — | |
| SCHEMBL706776 | 0.80 | SLC2A1 (0.35) | — | |
| SCHEMBL706459 | 0.78 | BDKRB2 (0.34) | PRKCAPRKCD | |
| SCHEMBL23071617 | 0.77 | TAS1R3 (0.42) | — | |
| SCHEMBL23493479 | 0.77 | MAPT (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20040028978-A1 | Proton conducting membrane, method for producing the same, and fuel cell using the same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2004-02-12 | — | — | US | disclosed |
| EP-1334993-A2 | Proton conducting membrane, method for producing the same, and fuel cell using the same | National Institute of Advanced Industrial Science and Technology (JP) | 2003-08-13 | — | — | EP | disclosed |