SCHEMBL706459

SCHEMBL706459

CCCCC(CCCC)O[SiH2]c1ccc([SiH2]OC(CCCC)CCCC)cc1

nearest known ligand 0.34

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
BDKRB2 P30411 1/20 0.34
PRKCA P17252 1/20 0.33
PRKCD Q05655 1/20 0.33
DNM1 Q05193 2/20 0.31
SLC2A1 P11166 1/20 0.31
CA2 P00918 1/20 0.31
ALDH1A1 P00352 1/20 0.31
CYP3A4 P08684 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707559 0.96 BDKRB2 (0.32) BDKRB2PRKCAPRKCD
SCHEMBL712785 0.96 DNM1 (0.33) BDKRB2PRKCAPRKCDDNM1SLC2A1
SCHEMBL705078 0.94 DNM1 (0.37) BDKRB2DNM1SLC2A1CA2ALDH1A1
SCHEMBL707159 0.94 DNM1 (0.37) BDKRB2DNM1SLC2A1CA2ALDH1A1
SCHEMBL703936 0.92 PRKCA (0.37) BDKRB2PRKCAPRKCDCA2ALDH1A1
SCHEMBL705493 0.90 SLC2A1 (0.33) BDKRB2SLC2A1
SCHEMBL706776 0.88 SLC2A1 (0.35) DNM1SLC2A1ALDH1A1
SCHEMBL704515 0.86
SCHEMBL702168 0.86 LAP3 (0.33) BDKRB2PRKCAPRKCDSLC2A1
SCHEMBL712793 0.78 PRKCA (0.34) PRKCAPRKCD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed