SCHEMBL707559

SCHEMBL707559

CCCCC(CCC)O[SiH2]c1ccc([SiH2]OC(CCC)CCCC)cc1

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
BDKRB2 P30411 1/20 0.32
CTSK P43235 3/20 0.31
PRKCA P17252 1/20 0.31
PRKCD Q05655 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706459 0.96 BDKRB2 (0.34) BDKRB2PRKCAPRKCD
SCHEMBL705493 0.94 SLC2A1 (0.33) BDKRB2
SCHEMBL706776 0.92 SLC2A1 (0.35)
SCHEMBL712785 0.92 DNM1 (0.33) BDKRB2PRKCAPRKCD
SCHEMBL704515 0.92
SCHEMBL705078 0.90 DNM1 (0.37) BDKRB2
SCHEMBL707159 0.90 DNM1 (0.37) BDKRB2
SCHEMBL703936 0.88 PRKCA (0.37) BDKRB2CTSKPRKCAPRKCD
SCHEMBL712793 0.83 PRKCA (0.34) PRKCAPRKCD
SCHEMBL702168 0.82 LAP3 (0.33) BDKRB2PRKCAPRKCD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed