SCHEMBL706776

SCHEMBL706776

CCCCCCC(CCC)O[SiH2]c1ccc([SiH2]OC(CCC)CCCCCC)cc1

nearest known ligand 0.35

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
SLC2A1 P11166 1/20 0.35
PRSS1 P07477 2/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33
LMNA P02545 1/20 0.32
ALDH1A1 P00352 1/20 0.32
CSNK1E P49674 1/20 0.32
LAP3 P28838 1/20 0.32
CTSG P08311 1/20 0.31
CTRB1 P17538 1/20 0.31
CMA1 P23946 1/20 0.31
DNM1 Q05193 2/20 0.31
NR1I2 O75469 1/20 0.31
SMPD1 P17405 3/20 0.31
NR5A1 Q13285 1/20 0.31
HTR1A P08908 1/20 0.31
OPRM1 P35372 1/20 0.30
GLS2 Q9UI32 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705493 0.98 SLC2A1 (0.33) SLC2A1PRSS1PRSS2PRSS3CTSG
SCHEMBL707159 0.94 DNM1 (0.37) SLC2A1PRSS1PRSS2PRSS3LMNA
SCHEMBL705078 0.94 DNM1 (0.37) SLC2A1PRSS1PRSS2PRSS3LMNA
SCHEMBL707559 0.92 BDKRB2 (0.32)
SCHEMBL712785 0.92 DNM1 (0.33) SLC2A1PRSS1PRSS2PRSS3LMNA
SCHEMBL706459 0.88 BDKRB2 (0.34) SLC2A1ALDH1A1DNM1
SCHEMBL704515 0.88
SCHEMBL702168 0.87 LAP3 (0.33) SLC2A1PRSS1PRSS2PRSS3LAP3
SCHEMBL703936 0.81 PRKCA (0.37) ALDH1A1
SCHEMBL712793 0.80 PRKCA (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed