SCHEMBL703936

SCHEMBL703936

CCCCC(CC)O[SiH2]c1ccc([SiH2]OC(CC)CCCC)cc1

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 1/20 0.37
PRKCD Q05655 1/20 0.37
ALDH1A1 P00352 3/20 0.33
CA2 P00918 1/20 0.33
CYP3A4 P08684 1/20 0.33
BDKRB2 P30411 1/20 0.32
CTSK P43235 3/20 0.31
CTSL P07711 1/20 0.31
CTSB P07858 1/20 0.31
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702168 0.94 LAP3 (0.33) PRKCAPRKCDBDKRB2
SCHEMBL706459 0.92 BDKRB2 (0.34) PRKCAPRKCDALDH1A1CA2CYP3A4
SCHEMBL707559 0.88 BDKRB2 (0.32) PRKCAPRKCDBDKRB2CTSK
SCHEMBL712785 0.88 DNM1 (0.33) PRKCAPRKCDALDH1A1BDKRB2
SCHEMBL712793 0.88 PRKCA (0.34) PRKCAPRKCD
SCHEMBL707159 0.86 DNM1 (0.37) ALDH1A1CA2BDKRB2
SCHEMBL705078 0.86 DNM1 (0.37) ALDH1A1CA2BDKRB2
SCHEMBL710832 0.83
SCHEMBL705493 0.82 SLC2A1 (0.33) BDKRB2
SCHEMBL706776 0.81 SLC2A1 (0.35) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed