SCHEMBL705493

SCHEMBL705493

CCCCCC(CCC)O[SiH2]c1ccc([SiH2]OC(CCC)CCCCC)cc1

nearest known ligand 0.33

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
SLC2A1 P11166 2/20 0.33
OPRM1 P35372 1/20 0.31
BDKRB2 P30411 2/20 0.31
PRSS1 P07477 2/20 0.30
PRSS2 P07478 1/20 0.30
PRSS3 P35030 1/20 0.30
CTSG P08311 1/20 0.30
CTRB1 P17538 1/20 0.30
CMA1 P23946 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706776 0.98 SLC2A1 (0.35) SLC2A1OPRM1PRSS1PRSS2PRSS3
SCHEMBL707559 0.94 BDKRB2 (0.32) BDKRB2
SCHEMBL712785 0.94 DNM1 (0.33) SLC2A1OPRM1BDKRB2PRSS1PRSS2
SCHEMBL705078 0.92 DNM1 (0.37) SLC2A1BDKRB2PRSS1PRSS2PRSS3
SCHEMBL707159 0.92 DNM1 (0.37) SLC2A1BDKRB2PRSS1PRSS2PRSS3
SCHEMBL706459 0.90 BDKRB2 (0.34) SLC2A1BDKRB2
SCHEMBL704515 0.90
SCHEMBL702168 0.89 LAP3 (0.33) SLC2A1OPRM1BDKRB2PRSS1PRSS2
SCHEMBL703936 0.82 PRKCA (0.37) BDKRB2
SCHEMBL712793 0.82 PRKCA (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed