SCHEMBL9972952

SCHEMBL9972952

COCN1CCN(CCO)C1=O

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.36
MEN1 O00255 2/20 0.36
BCHE P06276 1/20 0.31
ACHE P22303 1/20 0.31
KDM4E B2RXH2 1/20 0.31
LMNA P02545 1/20 0.31
TP53 P04637 1/20 0.31
POLB P06746 1/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31
RECQL P46063 1/20 0.31
BLM P54132 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
FKBP1A P62942 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9972942 0.93 MEN1 (0.32) KMT2AMEN1FKBP1A
SCHEMBL6754694 0.85 LMNA (0.31) LMNA
SCHEMBL4189770 0.85 ALDH1A1 (0.36) KMT2AMEN1MAPT
SCHEMBL11647312 0.84 LMNA (0.30) LMNA
SCHEMBL3191229 0.83 KMT2A (0.39) KMT2AMEN1KDM4ELMNATP53
SCHEMBL9972950 0.80
SCHEMBL9972951 0.79 KMT2A (0.31) KMT2A
SCHEMBL22604425 0.78 PER2 (0.36) KMT2AMEN1KDM4ELMNATP53
SCHEMBL6935640 0.78 PER2 (0.33)
SCHEMBL2616354 0.77 PIK3CD (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-19 US disclosed
US-20180081270-A1 RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-22 US disclosed
US-20180074404-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 US disclosed
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 US disclosed
US-9908831-B2 Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-06 US disclosed
US-9897913-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-20 US disclosed
US-9785048-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-10-10 US disclosed
US-9746769-B2 2017-08-29 US disclosed
US-20170183279-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM MITSUBISHI GAS CHEMICAL CO (JP) 2017-06-29 US disclosed
US-8829247-B2 Cyclic compound, method of producing the same, radiation sensitive composition, and method of forming resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-09 US disclosed
US-20140248561-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-04 US disclosed
US-8748078-B2 Cyclic compound, process for preparation thereof, radiation-sensitive composition, and method for formation of resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-06-10 US disclosed
US-20120282546-A1 CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-11-08 US disclosed
US-20120251947-A1 CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-10-04 US disclosed
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-20120171615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-20120164575-A1 CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-28 US disclosed
US-20120164576-A1 CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-28 US disclosed
US-20120156615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-06-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (12 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120251947-A1 CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN MRE11, SLC11A2, CROCC KMT2A 3862/4885MEN1 231/4885BCHE 2138/4885
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 KMT2A 2526/4885MEN1 1260/4885BCHE 613/4885
US-20140248561-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM ADH1C, ADH1A, FABP6 KMT2A 2551/4885MEN1 4061/4885BCHE 3517/4885
US-20120171379-A1 RADIATION-SENSITIVE COMPOSITION PARG, RAD51, SRMS KMT2A 1479/4885MEN1 1441/4885BCHE 4482/4885
US-20170183279-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM ADH1C, FABP6, ADH1A KMT2A 2977/4885MEN1 4251/4885BCHE 2724/4885
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN SLC11A2, ABCC1, FBL KMT2A 2377/4885MEN1 3872/4885BCHE 4123/4885
US-20120156615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, CCNE1, CCNA1 KMT2A 3802/4885MEN1 400/4885BCHE 3131/4885
US-20120282546-A1 CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD CROCC, XRCC6, CHEK1 KMT2A 4553/4885MEN1 1009/4885BCHE 2363/4885
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN CROCC, REV1, PARG KMT2A 1233/4885MEN1 1453/4885BCHE 3566/4885
US-20120171615-A1 CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, CCNE1, CCNA1 KMT2A 3802/4885MEN1 400/4885BCHE 3131/4885
US-20120164576-A1 CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN RAD1, RER1, REV1 KMT2A 3487/4885MEN1 187/4885BCHE 3844/4885
US-20120164575-A1 CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN WEE1, SLC11A2, RAD1 KMT2A 3063/4885MEN1 59/4885BCHE 3515/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.