Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PRSS1 | P07477 | 6/20 | 0.33 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.33 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | MAOB | P27338 | 2/20 | 0.33 |
| ▸ | MAOA | P21397 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | TMPRSS2 | O15393 | 1/20 | 0.31 |
| ▸ | CES2 | O00748 | 1/20 | 0.31 |
| ▸ | CES1 | P23141 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 2/20 | 0.30 |
| ▸ | RAB9A | P51151 | 1/20 | 0.30 |
| ▸ | PARP10 | Q53GL7 | 1/20 | 0.30 |
| ▸ | F2 | P00734 | 1/20 | 0.30 |
| ▸ | PLAU | P00749 | 1/20 | 0.30 |
| ▸ | PRMT1 | Q99873 | 1/20 | 0.30 |
| ▸ | ST14 | Q9Y5Y6 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11991281 | 0.89 | TMPRSS2 (0.44) | PRSS1MAOAL3MBTL1TMPRSS2GAA | |
| SCHEMBL12994643 | 0.89 | TMPRSS2 (0.44) | PRSS1MAOAL3MBTL1TMPRSS2GAA | |
| SCHEMBL10150737 | 0.85 | ALDH1A1 (0.36) | LMNAMAPTHTTGAA | |
| SCHEMBL12994622 | 0.84 | LMNA (0.46) | PRSS1PRSS2PRSS3LMNAMAPT | |
| SCHEMBL10239151 | 0.84 | LMNA (0.46) | PRSS1PRSS2PRSS3LMNAMAPT | |
| SCHEMBL10239159 | 0.83 | GAA (0.39) | PRSS1PRSS2PRSS3MAPTMAOB | |
| SCHEMBL10187218 | 0.80 | PARP15 (0.44) | PARP10 | |
| SCHEMBL12994629 | 0.80 | PARP10 (0.40) | RAB9APARP10 | |
| SCHEMBL10239156 | 0.80 | PARP10 (0.40) | RAB9APARP10 | |
| SCHEMBL10150723 | 0.78 | CES2 (0.34) | LMNAMAPTCES2CES1GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8114571-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-7928262-B2 | Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-19 | — | — | US | disclosed |
| US-7919226-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7556909-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-07 | — | — | US | disclosed |
| US-7511169-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080318160-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | RITTAL GMBH & CO. KG (DE) | 2008-12-25 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070099113-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070099112-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | PRSS1 1721/4885PRSS2 2340/4885PRSS3 1295/4885 |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | ASIC1, HAO2, HRH3 | PRSS1 2514/4885PRSS2 2499/4885PRSS3 2128/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | PRSS1 3568/4885PRSS2 2413/4885PRSS3 1795/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | PRSS1 3863/4885PRSS2 2071/4885PRSS3 1601/4885 |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | CYP21A2, C1S, C1R | PRSS1 1912/4885PRSS2 1937/4885PRSS3 1866/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | PRSS1 3211/4885PRSS2 3335/4885PRSS3 2390/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.