SCHEMBL107672

SCHEMBL107672

CCC(C)C(=O)OC(C)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
HTT P42858 1/20 0.30
MMP8 P22894 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2607995 0.93
SCHEMBL13325076 0.87
SCHEMBL9973298 0.87
SCHEMBL2607986 0.83
SCHEMBL2735051 0.83 ABHD6 (0.32) CA1CA2HTT
SCHEMBL12599385 0.82 MMP8 (0.32) MMP8
SCHEMBL16789536 0.82
SCHEMBL17515452 0.81 GRM1 (0.37) CA1CA2MMP8
SCHEMBL2608000 0.81 LMNA (0.32)
SCHEMBL6252200 0.80 ALOX15 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 375 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12038692-B2 Method for producing substrate with patterned film and fluorine-containing copolymer CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20230246226-A1 INORGANIC SOLID ELECTROLYTE-CONTAINING COMPOSITION, SHEET FOR ALL-SOLID STATE SECONDARY BATTERY, AND ALL-SOLID STATE SECONDARY BATTERY, AND MANUFACTURING METHODS FOR SHEET FOR ALL-SOLID STATE SECONDARY BATTERY AND ALL-SOLID STATE SECONDARY BATTERY FUJIFILM CORPORATION (JP) 2023-08-03 US disclosed
US-20230194988-A1 TRANSFER FILM, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR CIRCUIT WIRE, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-22 US disclosed
US-11675270-B2 Resist underlayer film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2023-06-13 US disclosed
US-11644422-B2 Calibration standard for evanescence microscopy CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) (FR) 2023-05-09 US disclosed
US-20180175299-A1 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM FUJIFILM CORPORATION (JP) 2018-06-21 US disclosed
US-20180113382-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-26 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-20110102528-A1 COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD FUJIFILM CORPORATION (JP) 2011-05-05 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20110076625-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-20110076615-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110014571-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-13 US disclosed
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-01-13 US disclosed
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180113382-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, FRG1, C1R CA1 62/4885CA2 64/4885HTT 2437/4885
US-20110102528-A1 COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD ARFGAP1, FRG1, RHOA CA1 112/4885CA2 1775/4885HTT 3302/4885
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, XRN2, RXRA CA1 435/4885CA2 1596/4885HTT 3434/4885
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, ETV1, VPS4B CA1 1657/4885CA2 1304/4885HTT 1166/4885
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS GRHPR, GLRA3, GLRA1 CA1 2911/4885CA2 3344/4885HTT 690/4885
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, RXRA, XRN2 CA1 326/4885CA2 1664/4885HTT 3433/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.