SCHEMBL15744282

SCHEMBL15744282

CC(C)(C)C(=O)OC(C)(C)C1CCCCC1

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 3/20 0.35
SSTR4 P31391 1/20 0.34
GAA P10253 1/20 0.33
CYP19A1 P11511 1/20 0.33
CHRM3 P20309 7/20 0.32
CHRM2 P08172 4/20 0.32
CHRM4 P08173 4/20 0.32
CHRM1 P11229 4/20 0.32
LMNA P02545 1/20 0.32
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
HPGD P15428 1/20 0.31
PDK1 Q15118 1/20 0.31
PDK2 Q15119 1/20 0.31
PDK3 Q15120 1/20 0.31
PDK4 Q16654 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16684202 0.98 EPHX1 (0.32) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL15160855 0.88 DGAT1 (0.43) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL26173666 0.84 EPHX1 (0.33) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL20962043 0.84 PDK1 (0.36) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL25068217 0.83 EPHX1 (0.35) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL15159063 0.82 EPHX1 (0.33) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL26939568 0.82 DGAT1 (0.35) EPHX1SSTR4GAACHRM3CHRM2
SCHEMBL14470620 0.82 EPHX1 (0.33) EPHX1SSTR4GAACYP19A1CHRM3
SCHEMBL16581039 0.82
SCHEMBL26159906 0.82 EPHX1 (0.31) EPHX1SSTR4CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023120250-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-06-29 WO disclosed
US-20230057401-A1 COATED UNDERLAYER FOR OVERCOATED PHOTORESIST U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-02-23 US disclosed
EP-3556783-B1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL CO (JP) 2022-12-28 EP disclosed
US-11300877-B2 Radiation-sensitive resin composition, resist pattern-forming method and acid diffusion control agent JSR CORPORATION (JP) 2022-04-12 US disclosed
EP-3581594-B1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL CO (JP) 2021-12-29 EP disclosed
EP-3521926-B1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORP (JP) 2021-04-21 EP disclosed
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-22 US disclosed
US-20200102270-A9 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, AND COMPOUND JSR CORPORATION (JP) 2020-04-02 US disclosed
EP-3556783-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN Sumitomo Chemical Company, Limited (JP) 2019-10-23 EP disclosed
EP-3556781-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN Sumitomo Chemical Company, Limited (JP) 2019-10-23 EP disclosed
US-20160237190-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-18 US disclosed
US-20160168115-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-16 US disclosed
US-20160139508-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-19 US disclosed
US-20160131971-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-12 US disclosed
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-12 US disclosed
US-20160062234-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-25 US disclosed
WO-2014104400-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-07-03 WO disclosed
EP-2413194-B1 Pattern forming method FUJIFILM CORP (JP) 2014-05-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN XDH, HAX1, MLX EPHX1 1816/4885SSTR4 3216/4885GAA 2846/4885
US-20160131971-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, RXRA, C1R EPHX1 687/4885SSTR4 3524/4885GAA 2780/4885
US-20160237190-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION HAX1, F11, RXRA EPHX1 1037/4885SSTR4 2908/4885GAA 4209/4885
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern RER1, BRIX1, NR2E3 EPHX1 786/4885SSTR4 2365/4885GAA 3594/4885
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN C1R, C9, RER1 EPHX1 787/4885SSTR4 3688/4885GAA 4219/4885
US-20160168115-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN FGFR1, RER1, FRG1 EPHX1 2374/4885SSTR4 252/4885GAA 4753/4885
US-20200102270-A9 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, AND COMPOUND RER1, RAD51, RFT1 EPHX1 1217/4885SSTR4 4433/4885GAA 2679/4885
US-11300877-B2 Radiation-sensitive resin composition, resist pattern-forming method and acid diffusion control agent RER1, RAD1, POLR1A EPHX1 2518/4885SSTR4 4417/4885GAA 2125/4885
US-20160139508-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN AFF1, AFF2, AFF4 EPHX1 923/4885SSTR4 2133/4885GAA 4761/4885
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, AFF1, FRG1 EPHX1 4157/4885SSTR4 1126/4885GAA 4651/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.