SCHEMBL16684202

SCHEMBL16684202

CC(C)(C)C(=O)OC(C)(C)C1CCCC1

nearest known ligand 0.32

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 3/20 0.32
LMNA P02545 1/20 0.32
CHRM3 P20309 7/20 0.32
SSTR4 P31391 1/20 0.32
DGAT1 O75907 1/20 0.31
GAA P10253 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
HSD17B10 Q99714 1/20 0.31
CYP19A1 P11511 1/20 0.30
CHRM2 P08172 2/20 0.30
CHRM4 P08173 2/20 0.30
CHRM1 P11229 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15744282 0.98 EPHX1 (0.35) EPHX1LMNACHRM3SSTR4GAA
SCHEMBL15160855 0.85 DGAT1 (0.43) EPHX1CHRM3SSTR4DGAT1GAA
SCHEMBL16581039 0.83
SCHEMBL26159906 0.83 EPHX1 (0.31) EPHX1CHRM3SSTR4
SCHEMBL26173666 0.82 EPHX1 (0.33) EPHX1CHRM3SSTR4GAACYP19A1
SCHEMBL26939567 0.82 DGAT1 (0.36) EPHX1LMNACHRM3DGAT1CHRM2
SCHEMBL20962043 0.82 PDK1 (0.36) EPHX1CHRM3SSTR4GAASMN1; SMN2
SCHEMBL22373388 0.82 GABRP (0.34) EPHX1LMNA
SCHEMBL25068217 0.81 EPHX1 (0.35) EPHX1LMNACHRM3SSTR4GAA
SCHEMBL14470620 0.80 EPHX1 (0.33) EPHX1CHRM3SSTR4GAACYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
EP-3556783-B1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL CO (JP) 2022-12-28 EP disclosed
EP-3581594-B1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL CO (JP) 2021-12-29 EP disclosed
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-22 US disclosed
EP-3556783-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN Sumitomo Chemical Company, Limited (JP) 2019-10-23 EP disclosed
EP-3556781-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN Sumitomo Chemical Company, Limited (JP) 2019-10-23 EP disclosed
US-20170329223-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-16 US disclosed
US-9771346-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-26 US disclosed
US-9760005-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9580402-B2 Salt, acid generator, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-02-28 US disclosed
US-20160237190-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-18 US disclosed
US-20160168115-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-16 US disclosed
US-20160139508-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-19 US disclosed
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-12 US disclosed
US-20160131971-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-12 US disclosed
US-20160062234-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-25 US disclosed
US-20150118628-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN XDH, HAX1, MLX EPHX1 1816/4885LMNA 1673/4885CHRM3 3465/4885
US-20160131971-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, RXRA, C1R EPHX1 687/4885LMNA 2332/4885CHRM3 2259/4885
US-20160237190-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION HAX1, F11, RXRA EPHX1 1037/4885LMNA 2466/4885CHRM3 946/4885
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern RER1, BRIX1, NR2E3 EPHX1 786/4885LMNA 3321/4885CHRM3 2733/4885
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN C1R, C9, RER1 EPHX1 787/4885LMNA 1660/4885CHRM3 1729/4885
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SCO2, CBR1, OXGR1 EPHX1 808/4885LMNA 4690/4885CHRM3 77/4885
US-20160168115-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN FGFR1, RER1, FRG1 EPHX1 2374/4885LMNA 2972/4885CHRM3 798/4885
US-20160139508-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN AFF1, AFF2, AFF4 EPHX1 923/4885LMNA 1481/4885CHRM3 1992/4885
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, AFF1, FRG1 EPHX1 4157/4885LMNA 2292/4885CHRM3 2474/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.