SCHEMBL409846

SCHEMBL409846

CCC(C)C(=O)CC(=O)C(C)C

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MMP1 P03956 2/20 0.37
MMP2 P08253 2/20 0.37
MMP3 P08254 1/20 0.37
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA12 O43570 1/20 0.33
MMP8 P22894 1/20 0.33
CA9 Q16790 1/20 0.33
FOLH1 Q04609 2/20 0.32
NAALAD2 Q9Y3Q0 2/20 0.32
TSHR P16473 3/20 0.32
USP2 O75604 1/20 0.32
HSD17B10 Q99714 1/20 0.32
CA7 P43166 1/20 0.31
CA14 Q9ULX7 1/20 0.31
KMT2A Q03164 2/20 0.30
MEN1 O00255 1/20 0.30
GLS O94925 1/20 0.30
KDM4E B2RXH2 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15992208 0.92 MMP1 (0.41) MMP1MMP2MMP3CA1CA2
SCHEMBL181668 0.83 CYP2D6 (0.36) MMP1MMP2MMP3CA1CA2
SCHEMBL20363804 0.82 USP2 (0.41) MMP1MMP2MMP3CA1CA2
SCHEMBL17721373 0.80 FDPS (0.41) CA1CA2TSHRHSD17B10CA7
SCHEMBL13387016 0.80 FDPS (0.41) MMP1MMP2MMP3CA1CA2
SCHEMBL9282807 0.80 CYP2D6 (0.35) MMP1MMP2MMP3CA1CA2
SCHEMBL29035568 0.80 CYP2D6 (0.35) MMP1MMP2MMP3CA1CA2
SCHEMBL30534795 0.80 CYP2D6 (0.35) MMP1MMP2MMP3CA1CA2
SCHEMBL30534794 0.80 CYP2D6 (0.35) MMP1MMP2MMP3CA1CA2
SCHEMBL30534812 0.80 CYP2D6 (0.35) MMP1MMP2MMP3CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 197 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12630570-B2 Organometallic adduct compound and method of manufacturing integrated circuit device by using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-05-19 US disclosed
CN-115362157-B Zinc compound, raw material for forming thin film, and method for producing same 株式会社ADEKA 2026-05-15 CN disclosed
EP-4130010-B1 ZINC COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2026-04-29 EP disclosed
EP-4067365-B1 COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2026-03-25 EP disclosed
US-12577660-B2 Compound, thin-film forming raw material, thin-film, and method of producing thin-film ADEKA CORPORATION (JP) 2026-03-17 US disclosed
US-20260055507-A1 THIN-FILM FORMING RAW MATERIAL, THIN-FILM AND METHOD OF PRODUCING THIN-FILM ADEKA CORPORATION (JP) 2026-02-26 US disclosed
US-20260055506-A1 HALOGEN COMPOUND ADEKA CORPORATION (JP) 2026-02-26 US disclosed
US-12516415-B2 Reactive material and method of producing thin-film ADEKA CORPORATION (JP) 2026-01-06 US disclosed
US-12509764-B2 Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film ADEKA CORPORATION (JP) 2025-12-30 US disclosed
EP-4660187-A1 COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM ADEKA CORPORATION (JP) 2025-12-10 EP disclosed
US-20070178235-A1 Thin film-forming material and method for producing thin film ADEKA CORPORATION (JP) 2007-08-02 US disclosed
EP-1770187-A1 THIN FILM-FORMING MATERIAL AND METHOD FOR PRODUCING THIN FILM Adeka Corporation (JP) 2007-04-04 EP disclosed
EP-1754800-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND THIN FILM FORMING METHOD Adeka Corporation (JP) 2007-02-21 EP disclosed
US-6258157-B1 BETA-DIKETONATES PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2001-07-10 US disclosed
US-6258157-B1 BETA-DIKETONATES PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2001-07-10 US disclosed
US-6117487-A METAL OXIDE FILM FORMED BY VAPOR DEPOSITION ASAHI DENKA KOGYO KABUSHIKI KAISHA (JP) 2000-09-12 US disclosed
US-5980983-A DEPOSITING A MIXTURE OF METAL BETA-DIKETONATES IN PRESENCE OF OXYGEN, VAPORIZING TO FORM HIGH-PURITY INORGANIC OXIDE LAYER; ELECTRICAL RESISTANCE, HIGH TRANSPARENCY TO LIGHT THE PRESIDENT AND FELLOWS OF HARVARD UNIVERSITY (US) 1999-11-09 US disclosed
US-5980983-A DEPOSITING A MIXTURE OF METAL BETA-DIKETONATES IN PRESENCE OF OXYGEN, VAPORIZING TO FORM HIGH-PURITY INORGANIC OXIDE LAYER; ELECTRICAL RESISTANCE, HIGH TRANSPARENCY TO LIGHT THE PRESIDENT AND FELLOWS OF HARVARD UNIVERSITY (US) 1999-11-09 US disclosed
WO-1998046617-A1 LIQUID PRECURSOR FOR FORMATION OF METAL OXIDES THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 1998-10-22 WO disclosed
WO-1998046617-A1 LIQUID PRECURSOR FOR FORMATION OF METAL OXIDES THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 1998-10-22 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260055506-A1 HALOGEN COMPOUND SLC9A2, SLC9A1, SLC9B2 MMP1 4015/4885MMP2 4317/4885MMP3 3044/4885
US-12509764-B2 Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film FTO, NOS1, NOS3 MMP1 3171/4885MMP2 3405/4885MMP3 3800/4885
US-12630570-B2 Organometallic adduct compound and method of manufacturing integrated circuit device by using the same C5, AFF2, AFF4 MMP1 4792/4885MMP2 4818/4885MMP3 4846/4885
US-20260055507-A1 THIN-FILM FORMING RAW MATERIAL, THIN-FILM AND METHOD OF PRODUCING THIN-FILM TMEM109, FTO, YTHDF2 MMP1 4720/4885MMP2 4795/4885MMP3 4837/4885
US-12577660-B2 Compound, thin-film forming raw material, thin-film, and method of producing thin-film METTL14, YTHDF2, YTHDF1 MMP1 2870/4885MMP2 2224/4885MMP3 3996/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.