SCHEMBL449277

SCHEMBL449277

CC12CCC(C(S(=O)(=O)[O-])C1=O)C2(C)C.c1ccc([S+](c2ccccc2)c2ccc(C3CCCCC3)cc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.32
MEN1 O00255 2/20 0.32
LMNA P02545 5/20 0.32
KDM4E B2RXH2 2/20 0.32
MAPK1 P28482 1/20 0.32
HSD17B10 Q99714 1/20 0.32
HTT P42858 2/20 0.32
SMN1; SMN2 Q16637 3/20 0.32
MAPT P10636 2/20 0.32
XBP1 P17861 1/20 0.32
PTGES2 Q9H7Z7 1/20 0.32
ALDH1A1 P00352 3/20 0.32
APOBEC3A P31941 1/20 0.32
APOBEC3G Q9HC16 1/20 0.32
TP53 P04637 1/20 0.32
ATM Q13315 1/20 0.32
HPGD P15428 1/20 0.31
TRPA1 O75762 1/20 0.30
POLB P06746 1/20 0.30
PGAM1 P18669 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL217323 0.89 ALDH1A1 (0.32) HSD17B10SMN1; SMN2ALDH1A1
SCHEMBL4480664 0.86 NR1I2 (0.32) HTT
SCHEMBL447468 0.85 PTGS2 (0.33)
SCHEMBL384343 0.83 ALDH1A1 (0.34) KMT2AALDH1A1
SCHEMBL6336719 0.83
SCHEMBL384824 0.81 NR1I2 (0.34) KMT2AHSD17B10HTTSMN1; SMN2ALDH1A1
SCHEMBL6339049 0.81 HSD11B1 (0.30)
SCHEMBL384856 0.81
SCHEMBL483101 0.80 ALDH1A1 (0.30) HSD17B10SMN1; SMN2ALDH1A1
SCHEMBL219862 0.78 HSD11B1 (0.36) KMT2AHSD17B10SMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12572075-B2 Composition, method of forming resist underlayer film, and method of forming resist pattern JSR CORPORATION (JP) 2026-03-10 US disclosed
US-20230041656-A1 COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-02-09 US disclosed
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2021-12-21 US disclosed
US-20210286267-A1 COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2021-09-16 US disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
US-10725376-B2 Pattern-forming method JSR CORPORATION (JP) 2020-07-28 US disclosed
WO-2020067183-A1 UNDERLAYER FILM FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES AND PATTERN FORMING METHOD JSR株式会社 2020-04-02 WO disclosed
US-20200041902-A9 RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT JSR CORPORATION (JP) 2020-02-06 US disclosed
US-20190155162-A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT JSR CORPORATION (JP) 2019-05-23 US disclosed
US-20190033713-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2019-01-31 US disclosed
US-20070265404-A1 Organic Bismuth Compound, Method for Producing Same, Living Radical Polymerization Initiator, Method for Producing Polymer Using Same, and Polymer OTSUKA CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
EP-1829883-A1 ORGANIC BISMUTH COMPOUND, METHOD FOR PRODUCING SAME, LIVING RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING POLYMER USING SAME, AND POLYMER Otsuka Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
EP-1767539-A1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL COMPANY, LTD. (JP) 2007-03-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1652866-A1 ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2006-05-03 EP disclosed
US-20060074139-A1 Acrylic copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-04-06 US disclosed
EP-1602975-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-12-07 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070265404-A1 Organic Bismuth Compound, Method for Producing Same, Living Radical Polymerization Initiator, Method for Producing Polymer Using Same, and Polymer DOHH, COASY, ODC1 KMT2A 1114/4885MEN1 1010/4885LMNA 2747/4885
US-12572075-B2 Composition, method of forming resist underlayer film, and method of forming resist pattern TOP1, NAF1, ASH2L KMT2A 511/4885MEN1 1539/4885LMNA 1170/4885
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent NOS1, ADCY1, IFNAR1 KMT2A 3284/4885MEN1 295/4885LMNA 3850/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.