Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HPGD | P15428 | 1/20 | 0.69 |
| ▸ | KDM4E | B2RXH2 | 6/20 | 0.66 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.60 |
| ▸ | LMNA | P02545 | 3/20 | 0.58 |
| ▸ | TSHR | P16473 | 2/20 | 0.58 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.56 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.56 |
| ▸ | PDE6D | O43924 | 2/20 | 0.56 |
| ▸ | CASR | P41180 | 1/20 | 0.54 |
| ▸ | ALDH2 | P05091 | 1/20 | 0.52 |
| ▸ | ALDH3A1 | P30838 | 1/20 | 0.52 |
| ▸ | PIN1 | Q13526 | 4/20 | 0.52 |
| ▸ | HRH1 | P35367 | 1/20 | 0.52 |
| ▸ | POLB | P06746 | 1/20 | 0.52 |
| ▸ | TP53 | P04637 | 1/20 | 0.51 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.51 |
| ▸ | GAA | P10253 | 1/20 | 0.51 |
| ▸ | PKM | P14618 | 1/20 | 0.50 |
| ▸ | JAK2 | O60674 | 1/20 | 0.50 |
| ▸ | JAK1 | P23458 | 1/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23559424 | 0.88 | HPGD (0.55) | HPGDKDM4EHSD17B10LMNATSHR | |
| SCHEMBL501785 | 0.86 | HPGD (0.64) | HPGDKDM4EHSD17B10LMNATSHR | |
| SCHEMBL501712 | 0.85 | HPGD (0.70) | HPGDKDM4EHSD17B10LMNATSHR | |
| SCHEMBL13587967 | 0.85 | LMNA (0.57) | KDM4EHSD17B10LMNATSHRALDH1A1 | |
| SCHEMBL14369849 | 0.84 | HPGD (0.56) | HPGDKDM4EHSD17B10LMNATSHR | |
| SCHEMBL502324 | 0.84 | HPGD (0.61) | HPGDKDM4EHSD17B10ALDH1A1SMN1; SMN2 | |
| SCHEMBL5374411 | 0.82 | HPGD (1.00) | HPGDKDM4EHSD17B10LMNATSHR | |
| SCHEMBL13587984 | 0.82 | MEN1 (0.52) | HPGDKDM4ENPSR1 | |
| SCHEMBL27799043 | 0.82 | KDM4E (0.61) | KDM4EHSD17B10LMNAALDH1A1SMN1; SMN2 | |
| SCHEMBL501902 | 0.81 | HPGD (0.68) | HPGDKDM4EHSD17B10LMNATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-28 | — | — | US | disclosed |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-05-20 | — | — | US | disclosed |
| US-20200249571-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-08-06 | — | — | US | disclosed |
| EP-2482132-B1 | Resist pattern forming process | SHINETSU CHEMICAL CO (JP) | 2019-10-16 | — | — | EP | disclosed |
| US-9651864-B2 | Negative resist composition, method for producing relief pattern using the same, and electronic component using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2017-05-16 | — | — | US | disclosed |
| EP-2033966-B1 | Novel photoacid generators, resist compositons, and patterning processes | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-7629108-B2 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-08 | — | — | US | disclosed |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090274984-A1 | CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090246686-A1 | POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| EP-2033966-A2 | Movel photoacid generators, resist compositons, and patterning processes | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-7141352-B2 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-11-28 | — | — | US | disclosed |
| US-20050008968-A1 | Basic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200249571-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | PAG1, LIFR, GIGYF2 | HPGD 3565/4885KDM4E 2171/4885HSD17B10 2445/4885 |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | HPGD 3346/4885KDM4E 3950/4885HSD17B10 743/4885 |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | HPGD 2728/4885KDM4E 1401/4885HSD17B10 4077/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | HPGD 920/4885KDM4E 4577/4885HSD17B10 81/4885 |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | CACNA1F, SLC6A5, IDUA | HPGD 4028/4885KDM4E 3328/4885HSD17B10 2366/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | HPGD 3544/4885KDM4E 4195/4885HSD17B10 2325/4885 |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | IDUA, SLC6A5, SLC6A9 | HPGD 3544/4885KDM4E 4195/4885HSD17B10 2325/4885 |
| US-20090274984-A1 | CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | WDR1, EGLN1, RER1 | HPGD 1815/4885KDM4E 115/4885HSD17B10 1431/4885 |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | CYP21A2, C1S, C1R | HPGD 852/4885KDM4E 4313/4885HSD17B10 31/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.