Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12016468 | 0.81 | EPHX2 (0.30) | EPHX2 | |
| SCHEMBL16382609 | 0.79 | — | — | |
| SCHEMBL9924513 | 0.76 | POLB (0.38) | HSD11B1 | |
| SCHEMBL12376810 | 0.76 | — | — | |
| SCHEMBL12019082 | 0.75 | HSD11B1 (0.33) | HSD11B1 | |
| SCHEMBL12277627 | 0.74 | — | — | |
| SCHEMBL8487235 | 0.73 | EPHX2 (0.33) | EPHX2HSD11B1 | |
| SCHEMBL12018134 | 0.72 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL6367440 | 0.72 | — | — | |
| SCHEMBL29308151 | 0.71 | EPHX2 (0.34) | EPHX2HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9244348-B2 | Chemically amplified negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9233919-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9182670-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9115074-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9040222-B2 | Polymerizable tertiary ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-8951710-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8933251-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110212391-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20110177455-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | EPHX2 1127/4885HSD11B1 2081/4885 |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | EPHX2 873/4885HSD11B1 1473/4885 |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | RER1, SMC4, SMCHD1 | EPHX2 1653/4885HSD11B1 3048/4885 |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RER1, AFF1, RFT1 | EPHX2 125/4885HSD11B1 897/4885 |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, ETV1, VPS4B | EPHX2 2756/4885HSD11B1 3921/4885 |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1A, ADH1C, ADH5 | EPHX2 655/4885HSD11B1 475/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.