Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABBR2 | O75899 | 4/20 | 0.46 |
| ▸ | GABBR1 | Q9UBS5 | 4/20 | 0.46 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.46 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.46 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.46 |
| ▸ | CES2 | O00748 | 1/20 | 0.46 |
| ▸ | CES1 | P23141 | 1/20 | 0.46 |
| ▸ | NPC1 | O15118 | 2/20 | 0.44 |
| ▸ | RAB9A | P51151 | 2/20 | 0.44 |
| ▸ | MEN1 | O00255 | 1/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.44 |
| ▸ | UTS2R | Q9UKP6 | 1/20 | 0.44 |
| ▸ | GABRB1 | P18505 | 1/20 | 0.44 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16938933 | 0.90 | CES2 (0.47) | GABBR2GABBR1ADRB2ADRB1ADRB3 | |
| SCHEMBL13704705 | 0.87 | GABBR2 (0.45) | GABBR2GABBR1ADRB2ADRB1ADRB3 | |
| SCHEMBL14330823 | 0.86 | CA12 (0.38) | GABBR2GABBR1ADRB2ADRB1ADRB3 | |
| SCHEMBL7602480 | 0.83 | GABBR2 (0.43) | GABBR2GABBR1ADRB2ADRB1ADRB3 | |
| SCHEMBL23997992 | 0.81 | NPC1 (0.64) | ADRB2ADRB1ADRB3CES2CES1 | |
| SCHEMBL107264 | 0.81 | TSHR (0.52) | ADRB2ADRB1ADRB3CES1NPC1 | |
| SCHEMBL12806511 | 0.79 | CES2 (0.49) | GABBR2GABBR1ADRB2ADRB1ADRB3 | |
| SCHEMBL23998049 | 0.78 | CES2 (0.52) | ADRB2ADRB1ADRB3CES2CES1 | |
| SCHEMBL24012957 | 0.78 | CES2 (0.52) | ADRB2ADRB1ADRB3CES2CES1 | |
| SCHEMBL16589189 | 0.78 | GABRB1 (0.46) | GABBR2GABBR1ADRB2ADRB1ADRB3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9244348-B2 | Chemically amplified negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9233919-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9182670-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9115074-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9040222-B2 | Polymerizable tertiary ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-8951710-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8933251-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110212391-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20110177455-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | GABBR2 4358/4885GABBR1 4551/4885ADRB2 3546/4885 |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | GABBR2 4400/4885GABBR1 4487/4885ADRB2 3233/4885 |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | RER1, SMC4, SMCHD1 | GABBR2 1607/4885GABBR1 1756/4885ADRB2 4656/4885 |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RER1, AFF1, RFT1 | GABBR2 3844/4885GABBR1 4224/4885ADRB2 1012/4885 |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, ETV1, VPS4B | GABBR2 1759/4885GABBR1 2283/4885ADRB2 4782/4885 |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1A, ADH1C, ADH5 | GABBR2 2434/4885GABBR1 2628/4885ADRB2 81/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.