SCHEMBL6448558

SCHEMBL6448558

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)C12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.41
HSD11B1 P28845 2/20 0.38
GAA P10253 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.36
LMNA P02545 1/20 0.36
ABL1 P00519 1/20 0.35
TSHR P16473 1/20 0.35
RIN1 Q13671 1/20 0.35
NPC1 O15118 4/20 0.35
RAB9A P51151 4/20 0.35
NPSR1 Q6W5P4 2/20 0.34
PRKCA P17252 1/20 0.32
USP2 O75604 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CNR2 P34972 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24268493 0.88 ALDH1A1 (0.41) ALDH1A1HSD11B1GAAL3MBTL1LMNA
SCHEMBL6448357 0.88
SCHEMBL12912768 0.87 ALDH1A1 (0.48) ALDH1A1GAAL3MBTL1LMNAABL1
SCHEMBL24409143 0.87 PKM (0.35) ALDH1A1GAAL3MBTL1LMNANPSR1
SCHEMBL14479483 0.86 PRKCA (0.42) ALDH1A1GAANPSR1PRKCA
SCHEMBL17578294 0.86 PRKCA (0.42) ALDH1A1GAANPSR1PRKCA
SCHEMBL75500 0.86 PRKCA (0.42) ALDH1A1GAANPSR1PRKCA
SCHEMBL26059431 0.86 L3MBTL1 (0.40) ALDH1A1HSD11B1GAAL3MBTL1LMNA
SCHEMBL17195513 0.86 NPSR1 (0.36) LMNANPSR1PRKCASMN1; SMN2
SCHEMBL24413589 0.86 NPSR1 (0.36) ALDH1A1HSD11B1LMNAABL1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 237 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-11822245-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-21 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-11782343-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-10 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
US-20090233223-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-7541133-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-06-02 US disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20080268370-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-30 US disclosed
US-20080254386-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-16 US disclosed
US-20080124652-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 ALDH1A1 1497/4885HSD11B1 15/4885GAA 4346/4885
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, HAO2, HRH3 ALDH1A1 486/4885HSD11B1 1169/4885GAA 4197/4885
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 ALDH1A1 4867/4885HSD11B1 2309/4885GAA 4226/4885
US-11782343-B2 Resist composition and patterning process HNRNPU, CBR1, CBR3 ALDH1A1 4653/4885HSD11B1 1817/4885GAA 4805/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R ALDH1A1 1216/4885HSD11B1 8/4885GAA 4419/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.