SCHEMBL10134610

SCHEMBL10134610

COC(=O)COC(=O)C(F)(C(F)(F)F)S(=O)(=O)O

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.32
CA14 Q9ULX7 1/20 0.32
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10134638 0.85 GAA (0.36) TSHR
SCHEMBL10134609 0.83 CA12 (0.32) CA12CA14TSHR
SCHEMBL10134611 0.82 ALDH1A1 (0.39) CA12CA14TSHR
SCHEMBL10151317 0.79 ALDH1A1 (0.36) TSHR
SCHEMBL12840948 0.78 CYP4F2 (0.38) TSHR
SCHEMBL13196181 0.76 LMNA (0.33)
SCHEMBL13196179 0.75 NAAA (0.32)
SCHEMBL786632 0.75 CYP19A1 (0.36)
SCHEMBL21576125 0.75 TSHR (0.40) TSHR
SCHEMBL685239 0.74 TSHR (0.36) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8900790-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-02 US disclosed
US-8852846-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-10-07 US disclosed
US-8574811-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-11-05 US disclosed
US-8546059-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-10-01 US disclosed
US-8530135-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8530137-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-10 US disclosed
US-8354217-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-01-15 US disclosed
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110200935-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-14 US disclosed
US-20110123926-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-26 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304294-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 CA12 740/4885CA14 1927/4885TSHR 1877/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S CA12 3176/4885CA14 4303/4885TSHR 2353/4885
US-20100304294-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME AFF1, F12, AP2A1 CA12 970/4885CA14 1555/4885TSHR 1242/4885
US-20110200935-A1 PHOTORESIST COMPOSITION C1R, F12, C1S CA12 2270/4885CA14 3524/4885TSHR 2611/4885
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION RCOR1, C1R, C1S CA12 3711/4885CA14 4162/4885TSHR 3451/4885
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CRY1, CHRM1, C1S CA12 556/4885CA14 1555/4885TSHR 1281/4885
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CLIC1, SLC10A6, APOL1 CA12 468/4885CA14 1063/4885TSHR 1498/4885
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME RER1, AFF1, FRG1 CA12 774/4885CA14 1123/4885TSHR 419/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.