Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTGS1 | P23219 | 4/20 | 0.42 |
| ▸ | PTGS2 | P35354 | 4/20 | 0.42 |
| ▸ | LMNA | P02545 | 3/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.42 |
| ▸ | AKR1C3 | P42330 | 2/20 | 0.42 |
| ▸ | CXCR1 | P25024 | 2/20 | 0.42 |
| ▸ | CXCR2 | P25025 | 2/20 | 0.42 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.42 |
| ▸ | ALB | P02768 | 1/20 | 0.42 |
| ▸ | ESR1 | P03372 | 1/20 | 0.42 |
| ▸ | RARB | P10826 | 1/20 | 0.42 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.42 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.42 |
| ▸ | HTR2A | P28223 | 1/20 | 0.42 |
| ▸ | NR1I3 | Q14994 | 1/20 | 0.42 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.42 |
| ▸ | CXCL8 | P10145 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | AKR1C2 | P52895 | 1/20 | 0.42 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12994655 | 0.87 | SIGMAR1 (0.35) | ALDH1A1SMN1; SMN2NPC1RAB9AL3MBTL1 | |
| SCHEMBL686330 | 0.80 | MMP2 (0.38) | PTGS2ADRB3TSHRBLMALDH1A1 | |
| SCHEMBL686324 | 0.78 | GSK3B (0.50) | LMNAMEN1ALDH1A1KMT2ASMN1; SMN2 | |
| SCHEMBL2740720 | 0.77 | NPSR1 (0.41) | NFKB1TSHRMEN1ALDH1A1KMT2A | |
| Bromide SCHEMBL2521756 | 0.77 | GSK3B (0.48) | LMNAMEN1ALDH1A1KMT2ASMN1; SMN2 | |
| SCHEMBL106663 | 0.76 | NPC1 (0.48) | LMNAESR1BLMPMP22ALDH1A1 | |
| SCHEMBL30089557 | 0.76 | PTGS1 (0.53) | PTGS1PTGS2LMNACYP2C9AKR1C3 | |
| SCHEMBL10122612 | 0.75 | GSK3B (0.52) | LMNATSHRALDH1A1KMT2ANPC1 | |
| SCHEMBL10122613 | 0.75 | GSK3B (0.52) | LMNAALDH1A1KMT2ASMN1; SMN2NPC1 | |
| SCHEMBL6117602 | 0.75 | NPC1 (0.50) | HTR2ATSHRMEN1ALDH1A1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 263 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-20190196328-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9880472-B2 | Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same | FUJIFILM CORPORATION (JP) | 2018-01-30 | — | — | US | disclosed |
| EP-2891014-B1 | PATTERN FORMING METHOD, AND ELECTRONIC DEVICE PRODUCING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2017-11-29 | — | — | EP | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-03-27 | — | — | US | disclosed |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7304175-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | PTGS1 3108/4885PTGS2 3534/4885LMNA 2258/4885 |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | NHERF1, SLC26A3, HCN3 | PTGS1 3887/4885PTGS2 4051/4885LMNA 2404/4885 |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SLC26A3, HCN3, NHERF1 | PTGS1 3193/4885PTGS2 3697/4885LMNA 2337/4885 |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | PTGS1 2641/4885PTGS2 3249/4885LMNA 1393/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | PTGS1 2547/4885PTGS2 3631/4885LMNA 2272/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | PTGS1 2891/4885PTGS2 3486/4885LMNA 2741/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | PTGS1 786/4885PTGS2 1108/4885LMNA 1993/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | PTGS1 3148/4885PTGS2 3266/4885LMNA 1557/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.