SCHEMBL685953

SCHEMBL685953

CCCCc1ccc(C(=O)C[S+]2CCCC2)cc1

nearest known ligand 0.51

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
THRA P10827 9/20 0.51
THRB P10828 9/20 0.51
RARB P10826 4/20 0.50
PLK1 P53350 1/20 0.50
HAO1 Q9UJM8 1/20 0.48
ALDH1A1 P00352 1/20 0.46
HPGD P15428 1/20 0.46
HSD17B10 Q99714 1/20 0.46
TRPV1 Q8NER1 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL686324 0.77 GSK3B (0.50) ALDH1A1
SCHEMBL685335 0.77 PTGS1 (0.42) RARBALDH1A1HPGD
SCHEMBL7633932 0.77 PLK1 (0.68) THRATHRBRARBPLK1HAO1
SCHEMBL10031544 0.77 THRA (0.64) THRATHRBRARBPLK1HAO1
SCHEMBL30089476 0.77 THRA (0.70) THRATHRBRARBPLK1HAO1
SCHEMBL12994655 0.77 SIGMAR1 (0.35) THRATHRBALDH1A1HPGD
Bromide SCHEMBL2521756 0.76 GSK3B (0.48) ALDH1A1
SCHEMBL83484 0.75 THRA (0.68) THRATHRBRARBPLK1HAO1
SCHEMBL12563620 0.75 ALDH1A1 (0.67) THRATHRBRARBPLK1HAO1
SCHEMBL27634917 0.75 THRA (0.62) THRATHRBRARBPLK1HAO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 268 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2550562-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-21 EP disclosed
EP-2539769-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-07 EP disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
EP-2681623-B1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORP (JP) 2019-07-10 EP disclosed
US-20190196328-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2019-06-27 US disclosed
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2019-04-02 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
US-9880472-B2 Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same FUJIFILM CORPORATION (JP) 2018-01-30 US disclosed
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-27 US disclosed
US-20080044738-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-02-21 US disclosed
US-7304175-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-04 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 US disclosed
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 US disclosed
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-05 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, NHERF1, HCN4 THRA 1278/4885THRB 2271/4885RARB 869/4885
US-20080044738-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same NHERF1, SLC26A3, HCN3 THRA 857/4885THRB 1837/4885RARB 1663/4885
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SLC26A3, HCN3, NHERF1 THRA 1139/4885THRB 2152/4885RARB 1718/4885
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film ACTR3, RXRA, RARA THRA 3370/4885THRB 4374/4885RARB 18/4885
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN3, NHERF1, HCN4 THRA 1253/4885THRB 2714/4885RARB 1258/4885
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN4, HCN3, HCN1 THRA 1558/4885THRB 2481/4885RARB 1246/4885
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, RFC1, RFC2 THRA 1122/4885THRB 1987/4885RARB 755/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.