SCHEMBL707159

SCHEMBL707159

CCCCCCCC(CCCC)O[SiH2]c1ccc([SiH2]OC(CCCC)CCCCCCC)cc1

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.37
SLC2A1 P11166 1/20 0.36
PRSS1 P07477 2/20 0.33
LMNA P02545 1/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33
ALDH1A1 P00352 1/20 0.33
CSNK1E P49674 1/20 0.33
LAP3 P28838 1/20 0.32
CA2 P00918 1/20 0.32
CTSG P08311 1/20 0.32
CTRB1 P17538 1/20 0.32
CMA1 P23946 1/20 0.32
NR1I2 O75469 1/20 0.32
SMPD1 P17405 3/20 0.32
BDKRB2 P30411 1/20 0.32
NR5A1 Q13285 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705078 1.00 DNM1 (0.37) DNM1SLC2A1PRSS1LMNAPRSS2
SCHEMBL712785 0.98 DNM1 (0.33) DNM1SLC2A1PRSS1LMNAPRSS2
SCHEMBL706776 0.94 SLC2A1 (0.35) DNM1SLC2A1PRSS1LMNAPRSS2
SCHEMBL706459 0.94 BDKRB2 (0.34) DNM1SLC2A1ALDH1A1CA2BDKRB2
SCHEMBL705493 0.92 SLC2A1 (0.33) SLC2A1PRSS1PRSS2PRSS3CTSG
SCHEMBL707559 0.90 BDKRB2 (0.32) BDKRB2
SCHEMBL702168 0.89 LAP3 (0.33) SLC2A1PRSS1PRSS2PRSS3LAP3
SCHEMBL703936 0.86 PRKCA (0.37) ALDH1A1CA2BDKRB2
SCHEMBL704515 0.81
SCHEMBL3200177 0.75 DNM1 (0.42) DNM1LMNACA2SMPD1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed