SCHEMBL712785

SCHEMBL712785

CCCCCC(CCCC)O[SiH2]c1ccc([SiH2]OC(CCCC)CCCCC)cc1

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.33
SLC2A1 P11166 2/20 0.33
BDKRB2 P30411 4/20 0.32
OPRM1 P35372 1/20 0.32
PRSS1 P07477 3/20 0.31
PRKCA P17252 1/20 0.31
PRKCD Q05655 1/20 0.31
PRSS2 P07478 1/20 0.31
PRSS3 P35030 1/20 0.31
CTSG P08311 2/20 0.31
CTRB1 P17538 2/20 0.31
CMA1 P23946 2/20 0.31
LAP3 P28838 1/20 0.31
ALDH1A1 P00352 1/20 0.30
LMNA P02545 1/20 0.30
CSNK1E P49674 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707159 0.98 DNM1 (0.37) DNM1SLC2A1BDKRB2PRSS1PRSS2
SCHEMBL705078 0.98 DNM1 (0.37) DNM1SLC2A1BDKRB2PRSS1PRSS2
SCHEMBL706459 0.96 BDKRB2 (0.34) DNM1SLC2A1BDKRB2PRKCAPRKCD
SCHEMBL705493 0.94 SLC2A1 (0.33) SLC2A1BDKRB2OPRM1PRSS1PRSS2
SCHEMBL706776 0.92 SLC2A1 (0.35) DNM1SLC2A1OPRM1PRSS1PRSS2
SCHEMBL707559 0.92 BDKRB2 (0.32) BDKRB2PRKCAPRKCD
SCHEMBL702168 0.90 LAP3 (0.33) SLC2A1BDKRB2OPRM1PRSS1PRKCA
SCHEMBL703936 0.88 PRKCA (0.37) BDKRB2PRKCAPRKCDALDH1A1
SCHEMBL704515 0.83
SCHEMBL712793 0.75 PRKCA (0.34) PRKCAPRKCD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed