Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Terephthalic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 18/20 | 0.50 |
| ▸ | CA1 | P00915 | 17/20 | 0.50 |
| ▸ | CA4 | P22748 | 1/20 | 0.46 |
| ▸ | MAPT | P10636 | 1/20 | 0.46 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
| ▸ | TAS2R10 | Q9NYW0 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Paraben SCHEMBL3694462 | 0.92 | CA1 (0.65) | CA2CA1MAPTMEN1LMNA | |
| Terephthalic Acid SCHEMBL8670584 | 0.92 | ALDH1A1 (0.50) | CA2CA1CA4TSHR | |
| Aminobenzoic Acid SCHEMBL5874995 | 0.90 | LMNA (0.47) | CA2CA1MAPTLMNATSHR | |
| Tetrylammonium SCHEMBL112480 | 0.89 | CA2 (0.64) | CA2CA1CA4MAPTMEN1 | |
| Tetrylammonium SCHEMBL9132006 | 0.88 | L3MBTL1 (0.46) | CA2CA1MAPT | |
| Tetrylammonium SCHEMBL11746106 | 0.87 | CA2 (0.40) | CA2CA1CA4MAPTMEN1 | |
| Tetrylammonium SCHEMBL9133888 | 0.87 | CA2 (0.40) | CA2CA1CA4MAPTMEN1 | |
| Tetrylammonium SCHEMBL28390101 | 0.86 | CA2 (0.59) | CA2CA1CA4MAPTMEN1 | |
| 4-Nitrobenzoic Acid SCHEMBL9619499 | 0.85 | CA1 (0.72) | CA2CA1MAPTLMNATSHR | |
| Tetrylammonium SCHEMBL8778011 | 0.84 | CA2 (0.57) | CA2CA4MEN1LMNACYP2D6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| EP-0105522-B1 | PROCESS FOR PRODUCTION OF POLYESTER | Toyo Boseki Kabushiki Kaisha (JP) | 1987-09-30 | — | — | EP | disclosed |
| EP-0105522-A2 | Process for production of polyester | Toyo Boseki Kabushiki Kaisha (JP) | 1984-04-18 | — | — | EP | disclosed |
| US-4440924-A | PRESENCE OF MAGNESIUM AND PHOSPHORUS COMPOUND | TOYO BOSEKI KABUSHIKI KAISHA (JP) | 1984-04-03 | — | — | US | disclosed |
| US-4306056-A | AMINE CATALYZED REACTION OF ISOPHTHALIC ACID AND 1,2-PROPYLENE OXIDE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1981-12-15 | — | — | US | disclosed |
| US-4255553-A | COMPRISING A COMPOUND HAVING AT LEAST TWO EPOXY GROUPS, A POLYESTER OR ACRYLIC RESIN, AND A QUARTERNARY AMMONIUM CARBOXYLATE AS CATALYST | TOYO BOSEKI KABUSHIKI KAISHA (JP) | 1981-03-10 | — | — | US | disclosed |
| US-4031035-A | Polyurethane-amide resins based upon isocyanate terminated prepolymers of bis-(2-hydroxyethyl)terephthalate | CELANESE CORPORATION (US) | 1977-06-21 | — | — | US | disclosed |
| US-3969394-A | Polyurethanes | CELANESE CORPORATION (US) | 1976-07-13 | — | — | US | disclosed |
| US-3962299-A | Organopolysiloxane polyesters | CELANESE CORPORATION (US) | 1976-06-08 | — | — | US | disclosed |
| US-3954841-A | Curable resin compositions | CELANESE CORPORATION (US) | 1976-05-04 | — | — | US | disclosed |
| US-3932566-A | Phosphonate polymers | CELANESE CORPORATION (US) | 1976-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CA2 3442/4885CA1 710/4885CA4 505/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA2 1064/4885CA1 667/4885CA4 749/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CA2 2255/4885CA1 1026/4885CA4 1589/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CA2 2902/4885CA1 1449/4885CA4 281/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA2 2105/4885CA1 964/4885CA4 1681/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CA2 972/4885CA1 322/4885CA4 440/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.